Wide‐gap (Ag,Cu)(In,Ga)Se2 solar cells with different buffer materials—A path to a better heterojunction,Progress in Photovoltaics

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Wide‐gap (Ag,Cu)(In,Ga)Se2 solar cells with different buffer materials—A path to a better heterojunction
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-01-26 , DOI: 10.1002/pip.3232
Jan Keller ₁ , Kostiantyn V. Sopiha ₁ , Olof Stolt ₁ , Lars Stolt ₁ , Clas Persson _{2,

3} , Jonathan J.S. Scragg ₁ , Tobias Törndahl ₁ , Marika Edoff ₁

Affiliation

This contribution concerns the effect of the Ag content in wide‐gap Ag_wCu_1‐wIn_1‐xGa_xSe₂ (ACIGS) absorber films and its impact on solar cell performance. First‐principles calculations are conducted, predicting trends in absorber band gap energy (E_g) and band structure across the entire compositional range (w and x). It is revealed that a detrimental negative conduction band offset (CBO) with a CdS buffer can be avoided for all possible absorber band gap values (E_g = 1.0–1.8 eV) by adjusting the Ag alloying level. This opens a new path to reduce interface recombination in wide‐gap chalcopyrite solar cells. Indeed, corresponding samples show a clear increase in open‐circuit voltage (V_OC) if a positive CBO is created by sufficient Ag addition. A further extension of the beneficial compositional range (positive CBO at buffer/ACIGS interface) is possible when exchanging CdS with Zn_1‐ySn_yO_z, because of its lower electron affinity (χ). Nevertheless, the experimental results strongly suggest that at present, residual interface recombination still limits the performance of solar cells with optimized CBO, which show an efficiency of up to 15.1% for an absorber band gap of E_g = 1.45 eV.

中文翻译：

具有不同缓冲材料的宽间隙（Ag，Cu）（In，Ga）Se2太阳能电池-通往更好异质结的途径

这一贡献涉及宽间隙Ag _w Cu _{1- w} In _{1- x} Ga _x Se ₂（ACIGS）吸收膜中Ag含量的影响及其对太阳能电池性能的影响。进行第一性原理计算，预测整个组成范围（w和x）中吸收带隙能（E _g）和能带结构的趋势。结果表明，对于所有可能的吸收带隙值（E _g），都可以避免使用CdS缓冲器产生有害的负导带偏移（CBO）。= 1.0–1.8 eV）通过调整银的合金化水平。这为减少宽间隙黄铜矿太阳能电池中的界面重组开辟了一条新途径。确实，如果通过添加足够的Ag产生正CBO ，相应的样本就会显示开路电压（V _OC）明显增加。当将CdS与Zn _{1- y} Sn _y O _z交换时，由于其较低的电子亲和力（χ），可能进一步扩大有益成分范围（缓冲液/ ACIGS界面处的正CBO ）。尽管如此，实验结果强烈表明，目前，残留的界面重组仍然限制了具有优化CBO的太阳能电池的性能，这表明吸收器带隙的最大效率为15.1％。E _g = 1.45 eV。

更新日期：2020-01-26

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