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Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells.
Scientific Reports ( IF 3.8 ) Pub Date : 2020-01-27 , DOI: 10.1038/s41598-020-58295-x Lucja Marona 1, 2 , Dario Schiavon 1, 2 , Michał Baranowski 3 , Robert Kudrawiec 3 , Iza Gorczyca 1 , Anna Kafar 1 , Piotr Perlin 1, 2
Scientific Reports ( IF 3.8 ) Pub Date : 2020-01-27 , DOI: 10.1038/s41598-020-58295-x Lucja Marona 1, 2 , Dario Schiavon 1, 2 , Michał Baranowski 3 , Robert Kudrawiec 3 , Iza Gorczyca 1 , Anna Kafar 1 , Piotr Perlin 1, 2
Affiliation
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We studied mechanisms of recombination in InGaN quantum wells in polar and semipolar structures. Photoluminescence measurements show that the optical emission linewidths for polar and semipolar structures are almost identical suggesting the same level of indium fluctuations in quanutm wells. Their "peak-energy-versus-temperature" relations demonstrate very pronounced "s-shape" effect. Emission linewidth measured by cathodoluminescence does not depend on area from which the light is collected meaning that the fluctuations are smaller that 100 nm. The time scale of recombination process are of the order of 80 ns for polar and 2 ns for semipolar. Energy dispersion of the recombination time is strong in polar structures and very weak in semipolar ones which can be interperted in terms of electric field influence on photoluminescence lifetime energy dispersion. At room temparture emmission is dominated by Schockley-Hall-Read recombination and does not show any dispersion. Rate equation analysis of photoluminescence transients show domination of excitonic recombination in the case of polar samples (low temperature) and bimolecular in the case of semipolar ones. Both types of quantum wells, polar and semipolar look similar from the point of view of localization but differ in their radiative recombination mechanisms.
中文翻译：
极性和半极性 InGaN 量子阱中辐射和非辐射复合的动力学。
我们研究了极性和半极性结构中 InGaN 量子阱的复合机制。光致发光测量表明，极性和半极性结构的光发射线宽几乎相同，表明量子阱中的铟波动水平相同。它们的“峰值能量与温度”关系表现出非常明显的“S 形”效应。通过阴极发光测量的发射线宽不取决于收集光的区域，这意味着波动小于 100 nm。极性复合过程的时间尺度约为 80 ns，半极性复合过程的时间尺度约为 2 ns。复合时间的能量色散在极性结构中很强，而在半极性结构中非常弱，这可以根据电场对光致发光寿命能量色散的影响来解释。在室温下，发射主要由肖克利-霍尔-里德复合主导，并且没有表现出任何色散。光致发光瞬态的速率方程分析表明，在极性样品（低温）的情况下，激子复合占主导地位，而在半极性样品的情况下，激子复合占主导地位。从局域化的角度来看，极性和半极性两种类型的量子阱看起来相似，但其辐射复合机制不同。
更新日期：2020-01-27
中文翻译：
极性和半极性 InGaN 量子阱中辐射和非辐射复合的动力学。
我们研究了极性和半极性结构中 InGaN 量子阱的复合机制。光致发光测量表明，极性和半极性结构的光发射线宽几乎相同，表明量子阱中的铟波动水平相同。它们的“峰值能量与温度”关系表现出非常明显的“S 形”效应。通过阴极发光测量的发射线宽不取决于收集光的区域，这意味着波动小于 100 nm。极性复合过程的时间尺度约为 80 ns，半极性复合过程的时间尺度约为 2 ns。复合时间的能量色散在极性结构中很强，而在半极性结构中非常弱，这可以根据电场对光致发光寿命能量色散的影响来解释。在室温下，发射主要由肖克利-霍尔-里德复合主导，并且没有表现出任何色散。光致发光瞬态的速率方程分析表明，在极性样品（低温）的情况下，激子复合占主导地位，而在半极性样品的情况下，激子复合占主导地位。从局域化的角度来看，极性和半极性两种类型的量子阱看起来相似，但其辐射复合机制不同。
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