Abstract The photovoltaic properties of Cu2O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering. For an Al-doped ZnO (AZO)/n-ZnO/p-Cu2O heterojunction solar cell prepared using r.f. power superimposed d.c magnetron sputtering, we achieved the highest efficiency yet reported (3.22%) by optimizing sputtering conditions such as the substrate-target distance and the r.f.:d.c. power ratio. This value represents characteristics that exceed those of AZO/Cu2O solar cells having a similar structure based on r.f. power superimposed d.c magnetron sputtering.

中文翻译：

---

低损伤磁控溅射n型ZnO薄膜/p型Cu2O片异质结太阳能电池的光伏特性

摘要 使用由二元氧化物半导体中的薄膜组成的 n 型层改善了基于 Cu2O 的异质结太阳能电池的光伏性能。该层是通过低损伤沉积方法制备的，该方法适用于多室射频 (rf) 功率叠加直流 (dc) 磁控溅射系统。对于使用射频功率叠加直流磁控溅射制备的 Al 掺杂的 ZnO (AZO)/n-ZnO/p-Cu2O 异质结太阳能电池，我们通过优化溅射条件（例如基板 - 靶）实现了迄今为止报道的最高效率（3.22%）距离和 rf:dc 功率比。该值代表的特性超过了具有基于射频功率叠加直流磁控溅射的类似结构的 AZO/Cu2O 太阳能电池的特性。