Abstract In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.

中文翻译：

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光子晶体表面发射激光器 (PCSEL) 的外延再生长和孔形状工程

摘要 在目前的研究中，通过分子束外延 (MBE) 外延再生长作为空心半导体光子晶体 (PhC) 表面发射激光器 (PCSEL) 的制造工艺进行了研究。PhC 通过电子束光刻 (EBL) 和电感耦合等离子体 (ICP) 蚀刻进行图案化，随后通过分子束外延进行再生，以在体半导体中嵌入一系列空隙。进行实验以研究再生长对气孔形态的影响。由此产生的空隙具有明显的泪珠形状，蚀刻孔的半径和深度在最终再生空隙的尺寸中起着非常关键的作用。我们证明了特定的孔径可以促进空隙底部或其侧壁的沉积，使我们能够根据 PCSEL 设计的要求更精确地设计空隙的形状。980 nm InGaAs 量子阱激光器结构针对设计波长下的低阈值激光进行了优化，并对完整的器件结构进行了图案化和再生。从这个过程展示了一个光泵浦 PCSEL。