Abstract A method for the synthesis of single crystals of BaSnO3 is reported. The growth employs a hydrothermal process using simple Ba(OH)2 and SnO2 powders in water at 650 °C and 140 MPa, with 5 M CsOH mineralizer in welded inert metal liners. Solubility studies indicate that the crystals have positive solubility coefficients that increase with temperature and mineralizer concentration in the growth regimes investigated. The tetravalent tin ions are somewhat aggressive toward the inert metal liners, especially silver and gold, requiring platinum liners for longer term growth runs. The (1 1 0) and (1 0 0) faces are commonly observed on the as-grown crystals. The crystals are thermally and chemically stable and can be readily polished as substrates for subsequent epitaxial growth. Crystals that are n-doped (La:BaSnO3) can be grown by the addition of the desired amount of La2O3 to the initial feedstock. The band gap for this hydrothermally-grown BaSnO3 was measured using the Tauc plot method to be 2.94 eV, with approximately 0.3 eV shift to higher energy upon n-doping.

中文翻译：

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用于宽禁带应用的 BaSnO3 单晶的水热生长

摘要 报道了一种合成BaSnO3单晶的方法。生长采用水热工艺，在 650 °C 和 140 MPa 的水中使用简单的 Ba(OH)2 和 SnO2 粉末，在焊接惰性金属衬垫中使用 5 M CsOH 矿化剂。溶解度研究表明，晶体具有正的溶解度系数，在所研究的生长方式中，该系数随着温度和矿化剂浓度的增加而增加。四价锡离子对惰性金属衬里有一定的侵蚀性，尤其是银和金，需要铂衬里才能长期生长。(1 1 0) 和 (1 0 0) 面通常在生长的晶体上观察到。晶体在热和化学上是稳定的，并且可以很容易地抛光作为随后外延生长的衬底。n 掺杂的晶体 (La: BaSnO3) 可以通过向初始原料中添加所需量的 La2O3 来生长。这种水热生长的 BaSnO3 的带隙使用 Tauc 绘图方法测量为 2.94 eV，在 n 掺杂时向更高能量移动大约 0.3 eV。