Abstract In this study, we grew GaN layers using Ga2O vapor synthesized from Ga2O3 powder and carbon powder. To precisely regulate the growth rate of the GaN layers, we controlled the supply rate of Ga2O vapor by controlling the reaction rate between Ga2O3 and carbon. The results showed that the growth rate increased linearly with partial pressure of Ga2O vapor and that GaN layers with the smooth (0 0 0 1) surface could be grown at 10–49 μm/h. X-ray diffraction (XRD) measurements revealed that the epitaxial layer was single-crystalline GaN and the FWHM of the GaN epitaxial layers ranged from 51 to 105 arcsec, confirming that the epitaxial layers inherit the high crystallinity of the seed substrates. Secondary ion mass spectrometry (SIMS) analysis showed that the oxygen concentrations in the epitaxial layers at the growth rates of 15 and 49 μm/h were 2.0 × 1017 and 2.5 × 1019 atoms/cm3, respectively. The carbon concentration in the epitaxial layers was below the detection limit. These values were the lowest seen in crystals obtained by the conventional technique using Ga2O vapor. These results show that this method, using Ga2O vapor produced by the reaction of Ga2O3 with carbon, has the potential to grow GaN crystals with high crystallinity and high purity by promoting the smoothness of the (0 0 0 1) surface.

中文翻译：

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使用由 Ga2O3 和碳合成的 Ga2O 蒸气生长 GaN 层

摘要 在这项研究中，我们使用由 Ga2O3 粉末和碳粉合成的 Ga2O 蒸气来生长 GaN 层。为了精确调节 GaN 层的生长速率，我们通过控制 Ga2O3 与碳之间的反应速率来控制 Ga2O 蒸气的供应速率。结果表明，生长速率随 Ga2O 蒸气的分压线性增加，并且具有光滑 (0 0 0 1) 表面的 GaN 层可以以 10–49 μm/h 的速度生长。X 射线衍射 (XRD) 测量显示外延层是单晶 GaN，GaN 外延层的 FWHM 范围为 51 到 105 弧秒，证实外延层继承了籽晶衬底的高结晶度。二次离子质谱 (SIMS) 分析表明，生长速率为 15 和 49 μm/h 时外延层中的氧浓度分别为 2.0 × 1017 和 2.5 × 1019 原子/cm3。外延层中的碳浓度低于检测极限。这些值是通过使用 Ga 2 O 蒸气的常规技术获得的晶体中所见的最低值。这些结果表明，该方法使用由 Ga2O3 与碳反应产生的 Ga2O 蒸气，有可能通过促进 (0 0 0 1) 表面的光滑度来生长具有高结晶度和高纯度的 GaN 晶体。