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Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches.
Nature Nanotechnology ( IF 38.1 ) Pub Date : 2020-01-27 , DOI: 10.1038/s41565-019-0623-7 Seungho Kim 1 , Gyuho Myeong 1 , Wongil Shin 1 , Hongsik Lim 1 , Boram Kim 1 , Taehyeok Jin 1 , Sungjin Chang 2 , Kenji Watanabe 3 , Takashi Taniguchi 3 , Sungjae Cho 1
Nature Nanotechnology ( IF 38.1 ) Pub Date : 2020-01-27 , DOI: 10.1038/s41565-019-0623-7 Seungho Kim 1 , Gyuho Myeong 1 , Wongil Shin 1 , Hongsik Lim 1 , Boram Kim 1 , Taehyeok Jin 1 , Sungjin Chang 2 , Kenji Watanabe 3 , Takashi Taniguchi 3 , Sungjae Cho 1
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The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently needed1. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (dec). Alternative tunnel field-effect transistors (TFETs) are widely studied to achieve a sub-thermionic SS and high I60 (the current where SS becomes 60 mV dec-1)2. Heterojunction (HJ) TFETs show promise for delivering a high I60, but experimental results do not meet theoretical expectations due to interface problems in the HJs constructed from different materials. Here, we report a natural HJ-TFET with spatially varying layer thickness in black phosphorus without interface problems. We have achieved record-low average SS values over 4-5 dec of current (SSave_4dec ~22.9 mV dec-1 and SSave_5dec ~26.0 mV dec-1) with record-high I60 (I60 = 0.65-1 μA μm-1), paving the way for application in low-power switches.
中文翻译：
用于低功率开关的厚度受控的黑磷隧道场效应晶体管。
晶体管的不断缩小一直是当前信息技术成功发展的关键。但是，随着摩尔定律达到极限，迫切需要开发替代晶体管架构1。晶体管每增加十倍的电流就需要至少60 mV的开关电压，即，每十倍（十进制）的60 mV的亚阈值摆幅（SS）。广泛研究了替代隧道场效应晶体管（TFET），以实现亚热电子SS和高I60（SS变为60 mV dec-1的电流）2。异质结（HJ）TFET具有提供高I60的潜力，但由于用不同材料制成的HJ的界面问题，实验结果未达到理论预期。这里，我们报道了一种天然HJ-TFET，其黑磷层厚度随空间变化而没有界面问题。在I60达到创纪录的高水平（I60 = 0.65-1μAμm-1）的情况下，我们在4-5 dec电流（SSave_4dec〜22.9 mV dec-1和SSave_5dec〜26.0 mV dec-1）上实现了创纪录的平均SS值，为在低功率开关中的应用铺平了道路。
更新日期：2020-01-27
中文翻译：
用于低功率开关的厚度受控的黑磷隧道场效应晶体管。
晶体管的不断缩小一直是当前信息技术成功发展的关键。但是，随着摩尔定律达到极限，迫切需要开发替代晶体管架构1。晶体管每增加十倍的电流就需要至少60 mV的开关电压，即，每十倍（十进制）的60 mV的亚阈值摆幅（SS）。广泛研究了替代隧道场效应晶体管（TFET），以实现亚热电子SS和高I60（SS变为60 mV dec-1的电流）2。异质结（HJ）TFET具有提供高I60的潜力，但由于用不同材料制成的HJ的界面问题，实验结果未达到理论预期。这里，我们报道了一种天然HJ-TFET，其黑磷层厚度随空间变化而没有界面问题。在I60达到创纪录的高水平（I60 = 0.65-1μAμm-1）的情况下，我们在4-5 dec电流（SSave_4dec〜22.9 mV dec-1和SSave_5dec〜26.0 mV dec-1）上实现了创纪录的平均SS值，为在低功率开关中的应用铺平了道路。
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