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Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions.
Nature Nanotechnology ( IF 38.1 ) Pub Date : 2020-01-27 , DOI: 10.1038/s41565-019-0607-7
Eva Grimaldi 1 , Viola Krizakova 1 , Giacomo Sala 1 , Farrukh Yasin 2 , Sébastien Couet 2 , Gouri Sankar Kar 2 , Kevin Garello 2 , Pietro Gambardella 1
Affiliation  

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement in the timescales that underlie the current-driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process that consists of a domain nucleation time and propagation time, which have different genesis, timescales and statistical distributions compared to STT switching. We further show that the combination of SOT, STT and the voltage control of magnetic anisotropy leads to reproducible subnanosecond switching with the spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT and the voltage control of magnetic anisotropy in determining the switching speed and efficiency of MTJ devices.

中文翻译:

三端磁性隧道结中自旋轨道扭矩和自旋传递扭矩切换的单发动力学。

电流感应的自旋转移扭矩(STT)和自旋轨道扭矩(SOT)可以实现非易失性磁性随机存取存储器中磁性隧道结(MTJ)的电切换。为了开发更快的存储设备,需要改善电流驱动的磁化动力学基础的时间尺度。在这里,我们报告了三端MTJ器件中SOT驱动的磁化反转的全电时间分辨测量。电流注入期间MTJ电阻的单次测量表明,SOT开关涉及一个随机的两步过程,该过程由一个域成核时间和传播时间组成,与STT开关相比,它们具有不同的成因,时间尺度和统计分布。我们进一步证明SOT的组合 STT和磁各向异性的电压控制导致可重现的亚纳秒开关,累积开关时间的扩展小于0.2 ns。在确定MTJ器件的开关速度和效率时,我们的测量揭示了SOT,STT和磁各向异性的电压控制的综合影响。
更新日期:2020-01-27
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