Although nanoscale deformation, such as nanostrain in iron-chalcogenide (FeSe_xTe_1−x, FST) thin films, has attracted attention owing to its enhancement of general superconducting properties, including critical current density (J_c) and critical transition temperature, the development of this technique has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO₂ inside an FST matrix using sequential pulsed laser deposition. By means of transmission electron microscopy and geometric phase analysis, we verified that the injection of a trace amount of CeO₂ forms nanoscale defects, with a nanostrained region of tensile strain (ε_zz ≅ 0.02) along the c-axis of the FST matrix. This nanostrained FST thin film achieves a remarkable J_c of 3.5 MA/cm² under a self-field at 6 K and a highly enhanced J_c under the entire magnetic field with respect to those of a pristine FST thin film.

尽管纳米级变形（例如硫属硫化铁（FeSe _x Te _{1- x}，FST）薄膜中的纳米应变）由于提高了一般的超导特性（包括临界电流密度（J _c）和临界转变温度）而受到关注，迄今为止，该技术的开发已被证明是一个极具挑战性和复杂的过程。在这里，我们通过使用连续脉冲激光沉积在FST基质内部注入痕量的CeO ₂，成功地制造了具有均匀分布的纳米应变的外延FST薄膜。通过透射电子显微镜和几何相分析，我们验证了注入痕量的CeO_2种形式纳米级的缺陷，具有拉伸应变的nanostrained区域（ε _ZZ  ≅  0.02）沿Ç的FST矩阵的轴摆动。该纳米应变的FST薄膜在6K的自电场下达到了3.5MA / cm ²的显着J _c，并且相对于原始FST薄膜而言在整个磁场下均具有高度增强的J _c。