Abstract Due to the extensive threat from TEA, the need for a simple and effective gas sensor for TEA detection is highly desired. Here, the design of the Au nanoparticles was deposited on the surface of the three-dimensional (3D) MoS2 nanostructures, and an excellent TEA gas sensor was successfully fabricated. The 3D MoS2 nanostructures are grown directly on the Al2O3 tubes with a simple and inexpensive hydrothermal process. Au nanoparticles are loaded on MoS2 nanostructures via DC-sputtering in a highly controllable and reproducible manner. Compared to the original MoS2 sensor, Au@MoS2 exhibits a remarkably higher response and faster recovery speed to TEA gas at 280 °C. The influence of the amount of Au on the device performance is also studied, which is controlled by changing the Au sputtering time (0, 30, 50, and 70 s). It is noteworthy that the Au@MoS2 sensor with a medium content (50 s) exhibits the highest response, which is about 4 times higher than that of original MoS2. The enhanced sensing property of the Au@MoS2 sensors is discussed with the semiconductor electron depletion layer model introduced by Au–MoS2 Schottky contact.

中文翻译：

---

直接生长在陶瓷管上的 Au@MoS2 纳米结构良好的三乙胺传感性能

摘要 由于 TEA 的广泛威胁，迫切需要一种用于 TEA 检测的简单有效的气体传感器。在这里，Au 纳米颗粒的设计被沉积在三维 (3D) MoS2 纳米结构的表面，并成功地制造了一个优秀的 TEA 气体传感器。3D MoS2 纳米结构通过简单且廉价的水热工艺直接生长在 Al2O3 管上。Au纳米颗粒通过直流溅射以高度可控和可重复的方式负载在二硫化钼纳米结构上。与原始的 MoS2 传感器相比，Au@MoS2 在 280 °C 下对 TEA 气体表现出明显更高的响应和更快的恢复速度。还研究了 Au 量对器件性能的影响，这是通过改变 Au 溅射时间（0、30、50 和 70 s）来控制的。值得注意的是，中等含量（50 s）的 Au@MoS2 传感器表现出最高的响应，大约是原始 MoS2 的 4 倍。Au@MoS2 传感器增强的传感特性通过 Au-MoS2 肖特基接触引入的半导体电子耗尽层模型进行讨论。