We propose a theoretical scheme exploiting magnetic proximity effect to realize strong excitonic emission and large, nonvolatile valley polarization in monolayer MoS${}_2$ at room temperature. A moderate exchange field can lead to valley selective switching of the exciton ground state from bright to dark and a large valley exciton splitting at the same time. The duo work synergistically to achieve a temperature enhanced valley polarization: while a large valley splitting is the critical first step for creating a valley exciton population imbalance, this imbalance is greatly enhanced by thermal excitation from the dark ground state, with orders of magnitude longer lifetime than that of the bright exciton. Realizing robust room temperature emission and valley polarization is essential for controlling the valley degree of freedom for information processing.

中文翻译：

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激子基态的谷电选择切换，使大室温谷底极化

我们提出了一种利用磁邻近效应实现单层MoS中强激子发射和大的非挥发性谷极化的理论方案${}_2$在室温下。适度的交换场会导致激子基态从亮到暗的谷选择性切换，同时导致大的谷激子分裂。两人协同工作以实现温度增强的波谷极化：虽然大波谷分裂是产生波谷激子总体失衡的关键第一步，但这种暗失态由于来自暗基态的热激发而大大增强，使用寿命延长了几个数量级比明亮的激子 实现稳定的室温发射和波谷极化对于控制信息处理的波谷自由度至关重要。