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Significant growth of vacancy-type defects by post-irradiation annealing in neon ion-irradiated tungsten probed by a slow positron beam
Journal of Nuclear Materials ( IF 2.8 ) Pub Date : 2020-01-23 , DOI: 10.1016/j.jnucmat.2020.152018
A. Yabuuchi , M. Tanaka , A. Kinomura

Irradiation damage and its evolution in noble gas ion-irradiated tungsten have not been investigated in detail other than in the case of helium ion irradiation. In this study, irradiation-induced vacancy-type defects in helium ion- and neon ion-irradiated tungsten were investigated by using a slow positron beam, and their annealing behavior in the temperature range of 20C-900C was compared by characterizing the Doppler broadening of positron annihilation radiation spectra. In helium ion-irradiated tungsten, slight aggregation of irradiation-induced vacancy-type defects was observed upon annealing, but eventually, a large portion of the vacancy clusters was eliminated after annealing at 900C. In contrast, in neon ion-irradiated tungsten, irradiation-induced vacancy-type defects were observed to aggregate significantly at 300C and 600C. In addition, the large vacancy clusters formed by the aggregation survived even after annealing at 900C.



中文翻译:

慢正电子束探测氖离子辐照钨后辐照退火后空位型缺陷的显着生长

除了在氦离子辐照的情况下,没有详细研究惰性气体离子辐照的钨中的辐照损伤及其演变。在这项研究中,在氦离子和氖离子照射钨照射诱导空位型缺陷被使用慢速正电子束的调查,并在该温度范围的20其退火行为 C-900 C是通过比较特征正电子ni没辐射谱的多普勒展宽。在氦离子照射的钨,被退火时观察到照射诱导空位型缺陷的轻微聚集,但最终,所述空位簇的大部分在900退火之后被消除C.相反,在氖离子照射的钨,观察到在300显著聚集照射诱导空位型缺陷 C和600 C.另外,通过聚合形成的大空位团甚至在900退火后存活∘C .

更新日期:2020-01-24
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