A core-shell nanowire-embedded composite formulation, exhibiting exquisite resistance switching behavior at quite low operating voltage (∼0.1 V) and extremely sustained switching behavior even under repeated mechanical deformation, has been developed for the application of a non-volatile memory device. This structure is based on a simple spin-casted composite comprising a stochastic distribution of Ag/TiO₂ core-shell nanowires deploying resistance switching behavior, and poly(vinyl alcohol) (PVA) as a dielectric matrix. The Ag/TiO₂ core-shell architecture of the one-dimensional (1D) resistance switching fillers (RSFs) and their distribution on a two-dimensional electrode surface were both designed to confine the electric field to the contact points between the RSFs and electrodes, imparting facile filamentary conduction in a highly confined region. These structural features render the switching behavior highly sustainable against mechanical stress and electrical noise; consequently, a notable switching operation, including a quite narrow variation of switching parameters, and very low operating voltages (V_set ∼ 0.098 ± 0.011 V, and V_reset ∼ −0.102 ± 0.013 V) were all successfully obtained for up to ∼50,000 mechanical deformation cycles. The resistance switching memory employing the core-shell nanowire-embedded composite formulation is highly promising for applications in which mechanical resilience, transparency, device lifetime, and power conservation are crucial, such as wearable electronics.

已经开发出一种核-壳纳米线嵌入的复合配方，该配方在相当低的工作电压（约0.1 V）下仍表现出出色的电阻开关性能，即使在反复的机械变形下也具有极其持久的开关性能，已用于非易失性存储器件的应用。该结构基于简单的自旋浇铸复合材料，该复合材料包括随机分布的Ag / TiO ₂核壳纳米线（采用电阻切换行为）和聚乙烯醇（PVA）作为介电基质。Ag / TiO ₂一维（1D）电阻开关填充剂（RSF）的核-壳结构及其在二维电极表面上的分布均设计为将电场限制在RSF和电极之间的接触点上，从而提供便捷的丝状导电性在高度密闭的地区 这些结构特征使开关行为在抵抗机械应力和电噪声方面具有高度可持续性。因此，一个显着的切换操作，其中包括的切换参数的相当窄的变化，和非常低的工作电压（V_集〜0.098±0.011 V，和V_复位在至多50,000次机械变形循环中都成功获得了-0.102±0.013 V）。采用核-壳纳米线嵌入式复合材料配方的电阻开关存储器对于机械回弹性，透明性，器件寿命和节能至关重要的应用（如可穿戴电子产品）非常有前途。