Abstract We have fabricated Ge20Ga10S70 glasses doped with 1.0 at% Er and annealed them to create chalcogenide glass-ceramics. We further characterized their optical transmission, luminescence, and microstructure for investigating the mechanism of the fluorescence enhancement. The results showed that, Ga2S3 and GeS2 crystals are precipitated successively, the transmittance of the glass-ceramics decreases, and the transmission edge shifts towards longer wavelengths with prolonged annealing time. Photoluminescence (PL) intensity at 1.54 μm in glass-ceramics with 20 h annealing time is twice than that in the base glass. From the similar evolution of PL and XRD intensity, we concluded that the luminescence enhancement is related to the Ga2S3 crystals in glass-ceramics. The Er ions are registered near tht Ga2S3 crystalline grains with a size of 50 nm as evident by elemental mapping. The results are helpful to optimize the chalcogenide glass components doped with REI and improve the solubility of REI.

中文翻译：

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Er3+ 掺杂的 Ge20Ga10S70 微晶玻璃的发光增强

摘要 我们制造了掺有 1.0 at% Er 的 Ge20Ga10S70 玻璃并对其进行退火以制造硫属化物玻璃陶瓷。我们进一步表征了它们的光学透射、发光和微观结构，以研究荧光增强的机制。结果表明，随着退火时间的延长，Ga2S3和GeS2晶体相继析出，微晶玻璃的透射率降低，透射边向长波长移动。退火时间为 20 小时的微晶玻璃在 1.54 μm 处的光致发光 (PL) 强度是基体玻璃的两倍。从 PL 和 XRD 强度的类似演变，我们得出结论，发光增强与微晶玻璃中的 Ga2S3 晶体有关。Er 离子被记录在尺寸为 50 nm 的 Ga2S3 晶粒附近，如元素映射所示。结果有助于优化掺杂REI的硫属化物玻璃组分，提高REI的溶解度。