Abstract A reactive direct current magnetron sputtering method with a controlled total gas flow rate was used to fabricate thin films of tantalum nitride (TaN) on SiO2/Si and multilayer ceramic substrates. In order to identify the total gas flow rate that produced the lowest variation in the sheet resistance and the temperature coefficient of resistance (TCR), TaN films deposited under total gas flow rates of 30, 40, 60, and 80 sccm were characterized in terms of their structural and electrical properties. The optimum total gas flow rate was 60 sccm revealing the lowest deviation of sheet resistance and TCR. Next, the durability and reliability at high temperatures, after heating and cooling cycles, and exposure to induced current were tested. The degradation behaviors and failure of TaN films were investigated by measuring the sheet resistance variation. To further explain the degradation of TaN films, additional analysis of their crystallinity was conducted. The results showed that TaN-based thin film resistors have high durability and reliability and are suitable for embedded passive resistors.

中文翻译：

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磁控溅射沉积氮化钽的降解行为与失效

摘要 采用可控总气体流量的反应性直流磁控溅射法在SiO2/Si和多层陶瓷基板上制备氮化钽(TaN)薄膜。为了确定在薄层电阻和电阻温度系数 (TCR) 中产生最低变化的总气体流速，在 30、40、60 和 80 sccm 的总气体流速下沉积的 TaN 薄膜被表征为它们的结构和电气特性。最佳总气体流速为 60 sccm，显示方块电阻和 TCR 的最低偏差。接下来，测试了高温、加热和冷却循环以及暴露于感应电流后的耐久性和可靠性。通过测量薄层电阻变化来研究 TaN 薄膜的降解行为和失效。为了进一步解释 TaN 薄膜的降解，对其结晶度进行了额外的分析。结果表明，TaN基薄膜电阻器具有较高的耐用性和可靠性，适用于嵌入式无源电阻器。