We demonstrate the first multi-stage 8 × 8 silicon photonic switch with switching elements based on dual add-drop microrings with a compact footprint of 4 mm2. This device leverages co-design of the switch architecture and the switching elements with a well-balanced set of performance metrics. The switching elements are designed to have a 3-dB optical passband of 165 GHz, exhibiting off- and on-resonance losses of 0.67 dB and 2 dB, respectively. Full characterization of all switch paths shows an end-to-end on-chip loss between 4.4 and 9.6 dB, with worst-case crosstalk leakage averaged at −16 dB. Owing to the efficient doped waveguide thermo-optic phase shifters, the device features a tuning efficiency of 48.85 GHz/mW. The reconfiguration time of the switch fabric is measured to be 1.2 μs and 0.5 μs at the rise and fall edge, respectively. The dual-microring switching element together with the multi-stage architecture preserves an end-to-end passband over 55 GHz. We validate the switch performance with optical paths of varying numbers of on- and off-resonance switching elements – less than 2 dB power penalties are obtained for all data routings at 32 Gbps.

中文翻译：

---

基于双微环开关元件的多级8×8硅光子开关

我们展示了第一个多级 8 × 8 硅光子开关，其开关元件基于双分插微环，占地面积为 4 mm2。该器件利用具有一组均衡性能指标的开关架构和开关元件的协同设计。开关元件设计为具有 165 GHz 的 3 dB 光通带，分别具有 0.67 dB 和 2 dB 的关断和导通谐振损耗。所有开关路径的完整表征表明，端到端片上损耗介于 4.4 和 9.6 dB 之间，最坏情况下的串扰泄漏平均为 -16 dB。由于高效的掺杂波导热光移相器，该器件的调谐效率为 48.85 GHz/mW。在上升沿和下降沿测量交换结构的重配置时间分别为 1.2 μs 和 0.5 μs。双微环开关元件与多级架构一起保留了超过 55 GHz 的端到端通带。我们使用不同数量的谐振和非谐振开关元件的光路来验证开关性能——对于 32 Gbps 的所有数据路由，获得的功率损失小于 2 dB。