We report a promising IQ optical modulator for beyond 100-GBd transmitter. By introducing both a new n-i-p-n heterostructure and an optimized capacitance-loaded traveling-wave electrode (CL-TWE), high-frequency electrical losses of the modulator can be drastically reduced. As a result, we extended an electro-optic (EO) bandwidth without degrading other properties, such as half-wave voltage (Vπ) and optical losses. The 3-dB EO bandwidth of the 1.5-V Vπ modulator reaches 80 GHz. Furthermore, we demonstrated up to 128-GBd IQ modulations by co-assembling with an ultra-broadband InP-based driver IC.

中文翻译：

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基于 80GHz 带宽和 1.5V Vπ InP 的 IQ 调制器

我们报告了一种用于超过 100-GBd 发射器的有前途的 IQ 光调制器。通过引入新的 nipn 异质结构和优化的电容加载行波电极 (CL-TWE)，可以显着降低调制器的高频电损耗。因此，我们扩展了电光 (EO) 带宽，而不会降低其他特性，例如半波电压 (Vπ) 和光损耗。1.5-V Vπ 调制器的 3-dB EO 带宽达到 80 GHz。此外，我们通过与基于 InP 的超宽带驱动器 IC 共同组装，演示了高达 128-GBd 的 IQ 调制。