We achieved high performance high speed silicon photonics carrier-depletion Mach-Zehnder modulation with commercial foundry by co-optimization of doping and device design assisted with an accurate electro-optical (EO) model. We demonstrated high performance IQ modulators operating at 85 Gbaud 16 QAM and 64 Gbaud 64 QAM with extinction ratio of over 25 dB. For the design of the high performance all-silicon carrier depletion modulator, we developed modeling and design tools to provide not only accuracy, but also efficiency in the simulation of distributed optical and electronic characteristics of travelling waveguides with different designs of optical and microwave waveguides under various doping conditions, which allow the co-design of velocity phase match between optical and microwave waveguides and the impedance match between microwave travelling waveguide and terminal impedance. Our experimental characterization test data agreed well with the model simulation data. More recently, with practical Nyquist filter and linear compensation in commercial arbitrary wave generator (AWG) and optical modulation analyzer (OMA), we demonstrated 100 Gbaud 32 QAM with an all-silicon IQ modulator, which has 6 dB electro-optical bandwidth of 50 GHz and BER achieving FEC threshold with a modern FEC, showing the potential for Tb/s applications.

中文翻译：

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高波特率全硅光子载波耗尽调制器

我们通过对掺杂和器件设计的协同优化以及精确的电光 (EO) 模型，与商业代工厂一起实现了高性能高速硅光子载流子耗尽马赫-曾德尔调制。我们展示了在 85 Gbaud 16 QAM 和 64 Gbaud 64 QAM 下运行且消光比超过 25 dB 的高性能 IQ 调制器。对于高性能全硅载流子耗尽调制器的设计，我们开发了建模和设计工具，不仅可以提高精度，还可以提高对不同光和微波波导设计的行进波导的分布式光学和电子特性进行仿真的效率。各种掺杂条件，这允许光波导和微波波导之间的速度相位匹配以及微波行进波导和终端阻抗之间的阻抗匹配的协同设计。我们的实验表征测试数据与模型模拟数据非常吻合。最近，通过商用任意波发生器 (AWG) 和光调制分析仪 (OMA) 中的实用奈奎斯特滤波器和线性补偿，我们展示了 100 Gbaud 32 QAM 和全硅 IQ 调制器，其 6 dB 光电带宽为 50 GHz 和 BER 使用现代 FEC 实现 FEC 阈值，显示了 Tb/s 应用的潜力。