The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors (FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices. The monolayer AsP holds a direct bandgap of 0.92 eV with significantly anisotropic electronic properties. Transfer characteristics of n‐type and p‐type AsP FETs are thoroughly investigated by scaling channel length in the armchair and zigzag direction, respectively. The simulation results indicate that AsP FETs exhibit exceptional device characteristics, such as high on‐state current, short delay time, and low power consumption. Moreover, transfer characteristics demonstrate superior anisotropy on in‐plane electrical transport properties. In particular, in the zigzag direction, even if the channel length is scaled down to 4 nm, the device performance still can satisfy the International Technology Roadmap for Semiconductors high‐performance requirement. Finally, through benchmarking energy‐delay product against other typical 2D FETs, AsP FETs are revealed to be strongly competitive 2D FETs.

中文翻译：

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单层黑砷磷FET中的各向异性平面弹道传输

通过第一原理模拟纳米器件中的弹道传输，探索了单层砷磷（AsP）场效应晶体管（FET）的性能极限。单层AsP保持0.92 eV的直接带隙，具有明显的各向异性电子特性。通过分别按扶手椅和之字形方向缩放沟道长度，可以彻底研究n型和p型AsP FET的传输特性。仿真结果表明，AsP FET具有出众的器件特性，例如高导通电流，短延迟时间和低功耗。此外，传输特性在面内电传输特性方面表现出优异的各向异性。特别是，在锯齿形方向上，即使通道长度缩小到4 nm，该设备的性能仍然可以满足《国际半导体技术路线图》的高性能要求。最后，通过将能量延迟产品与其他典型2D FET进行基准比较，发现AsP FET具有很强的竞争力。