Transparent oxide semiconductors exhibit great potential as fundamental building blocks for electronic applications. However, the lack of high‐performance p‐type oxide materials limits their potential applications for transparent electronics. Ternary p‐type perovskite NdAlO₃ thin films are prepared by spin coating and annealed at various temperatures. It is demonstrated that neodymium vacancies (V_Nd) is generated in NdAlO₃ thin film, and the presence of V_Nd results in high hole mobility. The thin‐film transistors (TFTs) based on NdAlO₃ thin film are integrated and exhibit typical p‐channel transistor behavior. The TFT based on NdAlO₃ thin film annealed at 700 °C exhibits an optimized electrical performance, including a field‐effect mobility (µ_FE) of 0.19 cm²V⁻¹s⁻¹ and an on/off current ratio (I_on/I_off) of ≈10⁵. When high‐k Al₂O₃ dielectric is integrated into the TFTs, the µ_FE and I_on/I_off are further improved to 9.93 cm²V⁻¹s⁻¹ and ≈10⁶, respectively. The fabrication of a p–n junction based on p‐NdAlO₃/n‐In₂O₃ heterojunction further confirms the excellent p‐type performance of the perovskite NdAlO₃ thin films. This work not only demonstrates the possibility of p‐type perovskite NdAlO₃ thin films applicable for transparent electronics, but also provides guidelines for the design of novel p‐type oxide semiconductors.

中文翻译：

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透明电子用溶液处理的高性能p型钙钛矿NdAlO3薄膜

透明氧化物半导体具有巨大的潜力，可作为电子应用的基本构件。但是，缺乏高性能的p型氧化物材料限制了它们在透明电子产品中的潜在应用。通过旋涂制备三元p型钙钛矿NdAlO ₃薄膜，并在不同温度下进行退火。已经证明在NdAlO ₃薄膜中产生钕空位（V _Nd），并且V _Nd的存在导致高空穴迁移率。基于NdAlO ₃薄膜的薄膜晶体管（TFT）已集成，并表现出典型的p沟道晶体管性能。基于NdAlO ₃的TFT经过700°C退火的薄膜具有优化的电性能，包括0.19 cm ² V ^-1 s ^-1的场效应迁移率（µ _FE）和≈10的开/关电流比（I _on / I _off）⁵。当高ķ的Al ₂ ö ₃电介质集成到TFT中，所述μ _FE和我_上/我_关进一步提高到9.93厘米² V ^-1小号^-1和≈10 ⁶， 分别。基于p-NdAlO ₃ / n-In ₂ O ₃异质结的ap-n结的制造进一步证实了钙钛矿NdAlO ₃薄膜的出色p型性能。这项工作不仅证明了p型钙钛矿NdAlO ₃薄膜适用于透明电子产品的可能性，而且还为新型p型氧化物半导体的设计提供了指导。