Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an alternative to prepare nonvolatile memory with polymer dielectrics.

中文翻译：

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具有多肽电介质的非易失性晶体管存储器

以合成多肽衍生物为电介质的有机非易失性晶体管存储器是通过溶液工艺制造的。当仅使用聚（γ-苄基-l-谷氨酸）（PBLG）作为电介质时，该器件在转移曲线中没有表现出明显的滞后现象。然而，PBLG 与 PMMA 混合导致内存窗口显着增加，最高可达 20 V。观察到器件性能显着依赖于混合比。该研究表明，晶体结构和分子排列显着影响晶体管型存储器件的电气性能，从而为制备具有聚合物电介质的非易失性存储器提供了一种替代方法。