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Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge2Sb2Te5 via Telecom-Band Encoding
ACS Photonics ( IF 6.5 ) Pub Date : 2020-01-29 , DOI: 10.1021/acsphotonics.9b01456
Gary A. Sevison 1, 2 , Shiva Farzinazar 3 , Joshua A. Burrow 1 , Christopher Perez 4 , Heungdong Kwon 4 , Jaeho Lee 3 , Mehdi Asheghi 4 , Kenneth E. Goodson 4 , Andrew Sarangan 1 , Joshua R. Hendrickson 2 , Imad Agha 1, 5
Affiliation  

We propose and demonstrate a two-dimensional 4-bit fully optical nonvolatile memory using Ge2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence, increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies (maximum 60 nJ/bit for write, depending on the number of pulses). For our experimental results, 50 ns long pulses with a 25 ns fall time, a peak power of 200 mW, and a 125 kHz repetition rate were used. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.

中文翻译:

通过电信频段编码在Ge 2 Sb 2 Te 5中实现相变动力学和二维4位存储

我们提出并演示了使用Ge 2 Sb 2 Te 5的二维4位全光非易失性存储器(GST)相变材料,并通过1550 nm激光进行编码。使用电信波段激光,由于在该波长范围内GST的低损耗特性,我们能够深入到材料中,因此与以前的演示相比,光学写/读级别的数量增加了,同时保持在可接受的读/写能量(最大60 nJ /位的写操作,取决于脉冲数)。对于我们的实验结果,使用了50 ns长的脉冲,25 ns的下降时间,200 mW的峰值功率和125 kHz的重复频率。我们通过基于有限元和成核理论的严格数值模拟,验证了我们的设计和实验结果,并使用直接十六进制编码成功编写和读取了字符串。
更新日期:2020-01-29
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