Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge2Sb2Te5 via Telecom-Band Encoding,ACS Photonics

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Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge2Sb2Te5 via Telecom-Band Encoding
ACS Photonics ( IF 6.5 ) Pub Date : 2020-01-29 , DOI: 10.1021/acsphotonics.9b01456
Gary A. Sevison _{1,

2} , Shiva Farzinazar ₃ , Joshua A. Burrow ₁ , Christopher Perez ₄ , Heungdong Kwon ₄ , Jaeho Lee ₃ , Mehdi Asheghi ₄ , Kenneth E. Goodson ₄ , Andrew Sarangan ₁ , Joshua R. Hendrickson ₂ , Imad Agha _{1,

5}

Affiliation

We propose and demonstrate a two-dimensional 4-bit fully optical nonvolatile memory using Ge₂Sb₂Te₅ (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence, increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies (maximum 60 nJ/bit for write, depending on the number of pulses). For our experimental results, 50 ns long pulses with a 25 ns fall time, a peak power of 200 mW, and a 125 kHz repetition rate were used. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.

中文翻译：

通过电信频段编码在Ge ₂ Sb ₂ Te _5中实现相变动力学和二维4位存储

我们提出并演示了使用Ge ₂ Sb ₂ Te ₅的二维4位全光非易失性存储器（GST）相变材料，并通过1550 nm激光进行编码。使用电信波段激光，由于在该波长范围内GST的低损耗特性，我们能够深入到材料中，因此与以前的演示相比，光学写/读级别的数量增加了，同时保持在可接受的读/写能量（最大60 nJ /位的写操作，取决于脉冲数）。对于我们的实验结果，使用了50 ns长的脉冲，25 ns的下降时间，200 mW的峰值功率和125 kHz的重复频率。我们通过基于有限元和成核理论的严格数值模拟，验证了我们的设计和实验结果，并使用直接十六进制编码成功编写和读取了字符串。

更新日期：2020-01-29

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