Abstract In this research, rare metal-free Cu2SnS3 (CTS) thin films were fabricated by the fine channel mist chemical vapor deposition (CVD) method, which does not require a vacuum apparatus. The mist solution was prepared by dissolving SnCl4 and CuCl2 in pure water (solvent). To obtain Cu-Sn (CT) precursor thin films by the fine channel mist CVD method, the mist solution was sprayed on alkali-free glass (Eagle) substrates heated at 390 °C. The prepared CT precursor films were then heated in a sulfur-containing atmosphere (H2S (3%) + N2) to obtain CTS thin films. The X-ray diffraction patterns of the samples showed the characteristic (200), (131), (−131), and (−333) peaks of monoclinic CTS. Raman scattering spectra of the samples showed peaks in the vicinity of 292, 313, 353, and 372 cm−1, attributed to monoclinic CTS. These results showed that the deposition of monoclinic CTS by the fine channel mist CVD method was prepared.

中文翻译：

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细通道雾化学气相沉积法制备单斜Cu2SnS3薄膜

摘要 本研究采用细通道雾化化学气相沉积（CVD）法制备不含稀有金属的Cu2SnS3（CTS）薄膜，不需要真空设备。通过将 SnCl4 和 CuCl2 溶解在纯水（溶剂）中来制备雾状溶液。为了通过细通道雾 CVD 方法获得 Cu-Sn (CT) 前驱体薄膜，将雾溶液喷涂在无碱玻璃 (Eagle) 基板上，加热温度为 390 °C。然后将制备的 CT 前体薄膜在含硫气氛 (H2S (3%) + N2) 中加热以获得 CTS 薄膜。样品的 X 射线衍射图显示了单斜 CTS 的特征 (200)、(131)、(-131) 和 (-333) 峰。样品的拉曼散射光谱在 292、313、353 和 372 cm-1 附近显示出峰值，归因于单斜 CTS。