We report on the effects of two different molecular beam epitaxy growth modes on the performance of In 0.14 Ga 0.86 As/GaAs quantum well infrared photodetectors (QWIPs). The performance of quantum well (QW) materials are characterized by photoluminescence (PL), x-ray diffraction, and high resolution transmission electron microscope, and a systematic photoelectric characterization is carried out for these InGaAs/GaAs QWIPs. The results indicate that the introduction of continuous low temperature growth can effectively reduce In atom interdiffusion while maintaining the higher PL intensity. QWIPs grown by the low temperature method show the bound-to-bound intraband transition mode as initially designed, whereas the high temperature during the growth makes the operating mode of the device changing to bound-to-quasi continuous mode, which affects the performance of the quantum well infrared photodetectors. Compared with InGaAs/GaAs QWIP fabricated by the temperatur...

中文翻译：

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高性能超长波长InGaAs / GaAs量子阱红外光电探测器的MBE生长

我们报告了两种不同的分子束外延生长模式对In 0.14 Ga 0.86 As / GaAs量子阱红外光电探测器（QWIPs）性能的影响。量子阱（QW）材料的性能通过光致发光（PL），x射线衍射和高分辨率透射电子显微镜进行表征，并对这些InGaAs / GaAs QWIP进行了系统的光电表征。结果表明，连续低温生长的引入可以有效地减少In原子的相互扩散，同时保持较高的PL强度。通过低温方法生长的QWIP表现出了最初设计的束缚到束带内跃迁模式，而生长过程中的高温使器件的操作模式变为束缚到准连续模式，这影响了量子阱红外光电探测器的性能。与通过温度制造的InGaAs / GaAs QWIP相比...