We report quantum Hall effect breakdown of a local filling factor $v_{\mathrm{local}}=1$ state formed in a bulk $v_{\mathrm{bulk}}=2$ system in an AlGaAs/GaAs heterostructure. When a finite source-drain bias is applied across the local system, the breakdown occurs in two steps. At low bias, quantized conductance through the $v_{\mathrm{local}}=1$ system breaks down due to interedge electron tunneling. At high bias, the incompressibility of the $v_{\mathrm{local}}=1$ system breaks down because the spin gap closes. The two steps are resolved by combining measurements of resistively detected nuclear magnetic resonance and shot noise, which allows one to evaluate electron spin polarization in the local system and spin-dependent charge transport through the system, respectively.

中文翻译：

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局部ν= 1量子霍尔态的两步分解

我们报告了局部填充因子的量子霍尔效应分解 $v_{\mathrm{本地}}=\mathrm{1个}$ 大量形成的状态 $v_{块}=2$AlGaAs / GaAs异质结构中的体系。当在整个本地系统上施加有限的源极-漏极偏置时，故障将分两步发生。在低偏置下，通过$v_{\mathrm{本地}}=\mathrm{1个}$系统由于边缘电子隧穿而崩溃。在高偏压下，$v_{\mathrm{本地}}=\mathrm{1个}$由于自旋间隙缩小，系统发生故障。通过结合电阻检测到的核磁共振和散粒噪声的测量值可以解决这两个步骤，从而可以分别评估局部系统中的电子自旋极化和通过系统的自旋相关电荷传输。