Higher-Order Topological Insulators in Quasicrystals.,Physical Review Letters

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Higher-Order Topological Insulators in Quasicrystals.
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-01-24 , DOI: 10.1103/physrevlett.124.036803
Rui Chen ₁ , Chui-Zhen Chen ₂ , Jin-Hua Gao ₃ , Bin Zhou ₁ , Dong-Hui Xu ₁

Affiliation

Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order topological insulators (SOTIs) can be constructed on the quasicrystalline lattices (QLs) with different tiling patterns. One is derived by using a Wilson mass term to gap out the edge states of the quantum spin Hall insulator on QLs. The other is the quasicrystalline quadrupole insulator (QI) with a quantized quadrupole moment. We reveal some unusual features of the corner states (CSs) in the quasicrystalline SOTIs. We also show that the quasicrystalline QI can be simulated by a designed electrical circuit, where the CSs can be identified by measuring the impedance resonance peak. Our findings not only extend the concept of HOTIs into quasicrystals but also provide a feasible way to detect the topological property of quasicrystals in experiments.

中文翻译：

准晶体中的高阶拓扑绝缘体。

当前对高阶拓扑绝缘体（HOTI）的理解主要基于晶体材料。在这里，我们建议可以在准晶体中实现HOTI。具体来说，我们表明可以在具有不同平铺模式的准晶格（QL）上构造两种不同类型的二阶拓扑绝缘体（SOTI）。一种是通过使用Wilson质量项来消除QL上量子自旋霍尔绝缘体的边缘状态。另一个是具有量化四极矩的准晶体四极绝缘子（QI）。我们揭示了准晶体SOTI中拐角状态（CS）的一些不寻常特征。我们还表明，可以通过设计的电路来模拟准晶体QI，其中可以通过测量阻抗谐振峰来识别CS。

更新日期：2020-01-23

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