Stability of Vicinal Surfaces: Beyond the Quasistatic Approximation.,Physical Review Letters

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Stability of Vicinal Surfaces: Beyond the Quasistatic Approximation.
Physical Review Letters ( IF 8.1 ) Pub Date : 2020-01-24 , DOI: 10.1103/physrevlett.124.036101
L Guin _{1,

2} , M E Jabbour _{1,

3} , L Shaabani-Ardali _{4,

5} , L Benoit-Maréchal _{1,

2} , N Triantafyllidis _{1,

3,

6}

Affiliation

We revisit the step bunching instability without recourse to the quasistatic approximation and show that the stability diagrams are significantly altered, even in the low-deposition regime where it was thought sufficient. In particular, steps are unstable against bunching for attachment-detachment limited growth. By accounting for the dynamics and chemical effects, we can explain the onset of step bunching in Si(111)-(7×7) and GaAs(001) without resort to the inverse Schwoebel barrier or step-edge diffusion. Further, the size-scaling analysis of step-bunch growth, as induced by these two combined effects, agrees with the bunching regime observed at 750 °C in Si(111)-(7×7).

中文翻译：

相邻表面的稳定性：超出准静态近似。

我们在不求助于准静态逼近的情况下重新研究了台阶束的不稳定性，并表明，即使在认为足够的低沉积状态下，稳定性图也发生了显着变化。特别是，步骤对于聚集的附着-分离受限生长不稳定。通过考虑动力学和化学效应，我们可以解释在Si（111）-（7×7）和GaAs（001）中阶跃成束的发生，而无需借助反Schwoebel势垒或阶跃边缘扩散。此外，由这两种组合效应引起的阶梯状束增长的尺寸缩放分析与在Si（111）-（7×7）中在750°C下观察到的聚集态一致。

更新日期：2020-01-23

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