Abstract GeSe2 Nano-Films (GeSe2NFMs) were prepared by chemical vapor deposition (CVD). The nanostructures of the GeSe2NFMs were revealed by X-ray diffraction and Raman spectroscopy, respectively. The linear optical properties of the samples have been studied by absorption spectroscopy. The nonlinear optical properties of the GeSe2NFMs have been studied by Z-scan technique with femtosecond pulses at the wavelength of 1030 nm. The measured band gap of GeSe2NFMs is 2.33eV, and the nonlinear absorption coefficient βeff is about 1.344*10−7 cm/W, which is a saturated absorption. In addition, in the fluorescence emission spectrum of GeSe2NFM, we found emission peaks in the red and infrared light regions with a wavelength of 760 nm. We found that GeSe2NFMs prepared by CVD has a larger band gap and a larger nonlinear absorption coefficient than the doped GeSe2. These studies indicate the application of GeSe2NFMs in laser emitters and nonlinear optical devices, and also provide a reference for subsequent research on nonlinear optical characteristics.

中文翻译：

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CVD制备的GeSe2纳米薄膜的光学性能

摘要 采用化学气相沉积(CVD) 方法制备了GeSe2 纳米薄膜(GeSe2NFMs)。GeSe2NFMs 的纳米结构分别通过 X 射线衍射和拉曼光谱揭示。通过吸收光谱研究了样品的线性光学特性。GeSe2NFMs 的非线性光学特性已经通过 Z 扫描技术与 1030 nm 波长的飞秒脉冲进行了研究。GeSe2NFMs的实测带隙为2.33eV，非线性吸收系数βeff约为1.344*10-7 cm/W，为饱和吸收。此外，在 GeSe2NFM 的荧光发射光谱中，我们发现了波长为 760 nm 的红光和红外光区域的发射峰。我们发现通过 CVD 制备的 GeSe2NFMs 比掺杂的 GeSe2 具有更大的带隙和更大的非线性吸收系数。这些研究表明了GeSe2NFMs在激光发射器和非线性光学器件中的应用，也为后续非线性光学特性的研究提供了参考。