Abstract Three doses (5 × 1015, 1 × 1016 and 5 × 1016 ions/cm2) of Si ions implantation into Si-terminated 6H–SiC substrate were carried out at an energy of 20 keV at room temperature. The wetting of pristine and Si-implanted 6H–SiC (Si–SiC) substrates by molten pure Cu, Cu-(42.9, 48.7, 70.4)Al alloys and pure Al were performed by the sessile drop technique under vacuum of ∼4 × 10−4 Pa at 1373 K. The surface characteristics of SiC substrates and wetting and interfacial behavior of Cu–Al/(Si-)SiC systems were analyzed and discussed. The equilibrium or final contact angles (θ) of Cu–Al/Si–SiC systems were increased more or less with the increase of Si ion implantation dose, and the Si ion implantation can markedly enhance the wettability of Cu-(0, 42.9)Al/SiC systems but weaken that of Cu-(48.7, 70.4, 100)Al/SiC systems. Interestingly, the graphitization phenomenon disappeared at the drop/substrate interface when the Al concentration was over 42.9%, and the Cu-42.9Al alloy cannot wet both the pristine 6H–SiC and Si–SiC substrates. These phenomena further demonstrated that the wetting of metal/SiC systems can be mainly determined by the metal-substrate interactions derived from the metal composition under a vacuum of and surface characteristics of metal drop and ceramic substrate during wetting.

中文翻译：

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Cu-Al/SiC 系统的润湿和界面行为：Si 离子注入和 Al 浓度的影响

摘要 在室温下，在能量为 20 keV 的条件下，进行了三种剂量（5 × 1015、1 × 1016 和 5 × 1016 离子/cm2）的 Si 离子注入到 Si 封端的 6H-SiC 衬底中。熔融纯 Cu、Cu-(42.9, 48.7, 70.4)Al 合金和纯 Al 对原始和注入 Si 的 6H-SiC (Si-SiC) 衬底的润湿是在~4 × 10 真空下通过静滴技术进行的-4 Pa at 1373 K。分析和讨论了 SiC 衬底的表面特性以及 Cu-Al/(Si-)SiC 系统的润湿和界面行为。Cu-Al/Si-SiC体系的平衡或最终接触角（θ）随着Si离子注入剂量的增加或多或少增加，Si离子注入可以显着提高Cu-(0, 42.9)的润湿性Al/SiC 系统但削弱了 Cu-(48.7, 70.4, 100)Al/SiC 系统。有趣的是，当Al浓度超过42.9%时，液滴/衬底界面处的石墨化现象消失，Cu-42.9Al合金不能润湿原始的6H-SiC和Si-SiC衬底。这些现象进一步表明，金属/SiC 系统的润湿主要取决于金属-基体在真空下的金属成分以及润湿过程中金属液滴和陶瓷基体的表面特性所产生的相互作用。