Abstract In this study, we have reported experiments on interlayer performance of single and multi walled carbon nanotubes (SWCNTs and MWCNTs) for fabrication of n-InP substrates based diode applications and characterized with various methods to obtain ideal parameters. Structural and morphological properties of the nanotubes have been investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM) measurements, respectively. The Au/SWCNTs/n-InP and Au/MWCNTs/n-InP diodes have been prepared at the same conditions and electrically analyzed in the temperature range of 80–320 K by steps of 20 K, using forward bias current-voltage (I–V) characteristics. In characterization stage, various methods such as standard, analytical, evolutionary algorithm and numerical methods have been used to determine the ideality factor, barrier height and series resistance values of the diodes. The performance of the methods was compared in their classes and it was tried to find solutions more easily than the others.

中文翻译：

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使用Au/CNTs/lnP/Au-Ge二极管基本电参数的理论和实验方法比较研究

摘要 在这项研究中，我们报道了单壁和多壁碳纳米管（SWCNTs 和 MWCNTs）的层间性能实验，用于制造基于 n-InP 衬底的二极管应用，并用各种方法表征以获得理想参数。已分别通过 X 射线衍射 (XRD)、拉曼光谱和扫描电子显微镜 (SEM) 测量研究了纳米管的结构和形态特性。Au/SWCNTs/n-InP 和 Au/MWCNTs/n-InP 二极管已在相同条件下制备，并在 80-320 K 的温度范围内以 20 K 的步长进行电分析，使用正向偏置电流 - 电压（I –V) 特性。在表征阶段，采用标准、解析、进化算法和数值方法等多种方法确定理想因子，二极管的势垒高度和串联电阻值。在它们的类中比较了这些方法的性能，并试图比其他方法更容易找到解决方案。