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Sensitized Yb3+ Luminescence in CsPbCl3 Film for Highly Efficient Near-Infrared Light-Emitting Diodes.
Advanced Science ( IF 14.3 ) Pub Date : 2020-01-21 , DOI: 10.1002/advs.201903142 Ayumi Ishii 1, 2 , Tsutomu Miyasaka 1
Advanced Science ( IF 14.3 ) Pub Date : 2020-01-21 , DOI: 10.1002/advs.201903142 Ayumi Ishii 1, 2 , Tsutomu Miyasaka 1
Affiliation
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Near-infrared (NIR) light emitting diodes (LEDs) with the emission wavelength over 900 nm are useful in a wide range of optical applications. Narrow bandgap NIR emitters have been widely investigated using organic compounds and colloidal quantum dots. However, intrinsically low charge mobility and luminescence efficiency of these materials limit improvement of the external quantum efficiency (EQE) of NIR LEDs, which is far from practical applications. Herein, a highly efficient NIR LED is demonstrated, which is based on an energy transfer from wide bandgap all inorganic perovskite (CsPbCl3) to ytterbium ions (Yb3+) as an NIR emitter doped in the perovskite crystalline film. High mobility of electrically excited carriers in the perovskite crystalline film provides a long carrier diffusion and enhances radiative recombination of an emission center due to minimized charge trapping losses, resulting in high EQE value in LEDs. The NIR emission of Yb3+ at around 1000 nm is found to be sensitized by CsPbCl3 thin film with a photoluminescence quantum yield over 60%. The LED based on Yb3+-doped CsPbCl3 film exhibits a high EQE of 5.9% with a peak wavelength of 984 nm, achieved by high carrier transporting ability and effective sensitized emission property in the solid-film structure.
中文翻译：
用于高效近红外发光二极管的 CsPbCl3 薄膜中的敏化 Yb3+ 发光。
发射波长超过 900 nm 的近红外 (NIR) 发光二极管 (LED) 可用于广泛的光学应用。使用有机化合物和胶体量子点对窄带隙近红外发射器进行了广泛的研究。然而，这些材料本质上较低的电荷迁移率和发光效率限制了近红外LED外量子效率（EQE）的提高，距离实际应用还很远。本文展示了一种高效的近红外 LED，其基于从宽带隙全无机钙钛矿 (CsPbCl3) 到作为掺杂在钙钛矿晶体薄膜中的近红外发射器的镱离子 (Yb3+) 的能量转移。钙钛矿晶体薄膜中电激发载流子的高迁移率提供了较长的载流子扩散，并由于最大限度地减少了电荷捕获损失而增强了发射中心的辐射复合，从而使 LED 具有高 EQE 值。发现 Yb3+ 在 1000 nm 左右的近红外发射被 CsPbCl3 薄膜敏化，光致发光量子产率超过 60%。基于Yb3+掺杂CsPbCl3薄膜的LED通过固体薄膜结构中的高载流子传输能力和有效的敏化发射特性实现了5.9%的高EQE，峰值波长为984 nm。
更新日期：2020-01-22
中文翻译：
用于高效近红外发光二极管的 CsPbCl3 薄膜中的敏化 Yb3+ 发光。
发射波长超过 900 nm 的近红外 (NIR) 发光二极管 (LED) 可用于广泛的光学应用。使用有机化合物和胶体量子点对窄带隙近红外发射器进行了广泛的研究。然而，这些材料本质上较低的电荷迁移率和发光效率限制了近红外LED外量子效率（EQE）的提高，距离实际应用还很远。本文展示了一种高效的近红外 LED，其基于从宽带隙全无机钙钛矿 (CsPbCl3) 到作为掺杂在钙钛矿晶体薄膜中的近红外发射器的镱离子 (Yb3+) 的能量转移。钙钛矿晶体薄膜中电激发载流子的高迁移率提供了较长的载流子扩散，并由于最大限度地减少了电荷捕获损失而增强了发射中心的辐射复合，从而使 LED 具有高 EQE 值。发现 Yb3+ 在 1000 nm 左右的近红外发射被 CsPbCl3 薄膜敏化，光致发光量子产率超过 60%。基于Yb3+掺杂CsPbCl3薄膜的LED通过固体薄膜结构中的高载流子传输能力和有效的敏化发射特性实现了5.9%的高EQE，峰值波长为984 nm。
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