Piezoelectric pressure sensing behaviors of high-density and low-damage CF₄-plasma-treated indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) coated by poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) films have been investigated. The CF₄ plasma treatment was performed on the IGZO channel by using an inductively coupled plasma (ICP) system with a quartz filter. Prior to the fabrication of devices, X-ray diffractometer (XRD) and atomic force microscopy (AFM) were applied to identify the enhancement in the crystallinity of P(VDF-TrFE) films on the plasma-fluorinated IGZO films. With the analyses of X-ray photoelectron spectroscopy (XPS), it is proved that the fluorine radicals reacted with the metal-oxygen bonds will increase the oxygen vacancies in IGZO films, contributing to an enhancement in field effect mobility (μ_FE) and drain current (I_DS) of IGZO TFTs. Furthermore, the fluorine atoms diffused from the IGZO channel into the bottom SiO₂ layer were confirmed by secondary ion-mass spectroscopy (SIMS), reducing the interfacial and oxide charges of the devices for a negative shift in threshold voltage (V_t). Under a 0.5-kg applied force press/release cyclic test, a 4.8-fold increase in drain current response of 1-min CF₄-plasma-treated piezoelectric pressure sensors was optimized, because of the enhanced electrical behaviors of IGZO TFTs and an increase in aligned dipole moments of P(VDF-TrFE) copolymers. The promising results make the piezoelectric pressure sensors with high-density and low-damage CF₄-plasma-treated IGZO TFTs coated by P(VDF-TrFE) copolymer suitable for future high-performance tactile sensing applications.

高密度和低损伤CF ₄等离子体处理的聚偏二氟乙烯-三氟乙烯-三氟乙烯共膜的铟镓锌氧化物（IGZO）薄膜晶体管（TFT）的压电压力传感行为）的电影已经过调查。CF ₄通过使用带有石英滤光片的电感耦合等离子体（ICP）系统对IGZO通道进行等离子体处理。在制造器件之前，先应用X射线衍射仪（XRD）和原子力显微镜（AFM）来确定等离子体氟化IGZO膜上P（VDF-TrFE）膜的结晶度提高。通过X射线光电子能谱（XPS）的分析，证明与金属-氧键反应的氟自由基会增加IGZO膜中的氧空位，从而有助于提高场效应迁移率（_μFE）和漏极IGZO TFT的电流（I _DS）。此外，氟原子从IGZO通道扩散到底部SiO _2中通过二次离子质谱（SIMS）确认了硅层的厚度，从而降低了器件的界面电荷和氧化物电荷，从而使阈值电压（V _t）发生负向偏移。在0.5千克外加压力按压/释放循环测试下，由于IGZO TFT的增强的电学行为和增加的电流，经过1分钟CF _4等离子处理的压电压力传感器的漏极电流响应提高了4.8倍，P（VDF-TrFE）共聚物的排列偶极矩 令人鼓舞的结果使压电压力传感器具有由P（VDF-TrFE）共聚物涂覆的高密度，低损伤CF ₄等离子体处理的IGZO TFT，适合未来的高性能触觉传感应用。