In this study, amorphous carbon buffer layer containing nano-crystalline diamond grains was pre-deposited on single crystal silicon (Si) wafers. (100) oriented diamond films were prepared on the buffer layer by increasing deposition temperature. Morphology observation demonstrated that (100) oriented diamond plates appear on the buffer layer, thus realizing the deposition of (100) oriented diamond film. Transmission electron microscopy confirmed that (100) oriented diamond dominates deposition at high temperatures, leading to the formation of the (100) oriented diamond plates. The fast lateral growth of nano-crystalline diamond grains with (100) orientation in the buffer layer is the main driving force for the deposition of (100) oriented diamond film, providing a new route for the preparation of (100) oriented diamond films.

在这项研究中，包含纳米晶金刚石晶粒的非晶碳缓冲层被预先沉积在单晶硅（Si）晶圆上。通过增加沉积温度，在缓冲层上制备了（100）取向的金刚石膜。形态学观察表明，（100）取向的金刚石板出现在缓冲层上，从而实现了（100）取向的金刚石膜的沉积。透射电子显微镜证实，（100）取向的金刚石在高温下占主导地位，导致形成（100）取向的金刚石板。在缓冲层中具有（100）取向的纳米晶体金刚石晶粒的快速横向生长是沉积（100）取向金刚石膜的主要驱动力，为制备（100）取向金刚石膜提供了新的途径。