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Plasmonic interference lithography by coupling the bulk plasmon polariton mode and the waveguide mode
Journal of Physics D: Applied Physics ( IF 3.1 ) Pub Date : 2020-01-21 , DOI: 10.1088/1361-6463/ab6430
Hongchao Liu 1 , Weijie Kong 2 , Qionggan Zhu 3 , Yun Zheng 1 , Kesheng Shen 1 , Jun Zhang 1 , Hai Lu 1
Affiliation  

Plasmonic lithography based on surface plasmon polariton has been proven to breaking the diffraction limit and deliver the super-resolution patterns. However, most previously reported studies suffer from the low energy efficiency and subwavelength excitation grating that obstructs the application in nanofabrication. In this work, a special plasmonic lithography prototype is proposed based on the coupling of the bulk plasmon polariton mode squeezed through the hyperbolic metamaterial (HMM) and the waveguide mode supported in the coupling layer/HMM/photoresist sandwich structure. The results demonstrate that periodic patterns with strong lithography light intensity (>220%) over the whole photoresist layer compared with incident optical intensity, high aspect ratios (1.5:1) and a half-pitch of 57.5 nm can be generated, under the interference of the fourth-order diffracted light of grating. The lithography linewidth can reach 1/16 of the mask period of 920 nm and ~1/8 of the wave...

中文翻译:

通过耦合体等离子体激元极化子模式和波导模式的等离子干涉光刻

已经证明基于表面等离振子极化的等离子光刻技术突破了衍射极限并提供了超分辨率图案。然而,大多数先前报道的研究都受到能量效率低和亚波长激发光栅的困扰,这阻碍了其在纳米加工中的应用。在这项工作中,基于通过双曲超材料(HMM)压缩的体等离子体激元极化模式和耦合层/ HMM /光致抗蚀剂夹层结构中支撑的波导模式的耦合,提出了一种特殊的等离子体光刻原型。结果表明,与入射光强度相比,可以在整个光致抗蚀剂层上产生具有强光刻光强度(> 220%),高纵横比(1.5:1)和半间距为57.5 nm的周期性图案,在光栅的四阶衍射光的干扰下。光刻线宽可以达到920 nm掩模周期的1/16和波的〜1/8 ...
更新日期:2020-01-22
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