For heavy ions implanted in low- Z targets it is possible to determine the depth and concentration of introduced heavy impurities by studying the energy spectra of electrons scattered from the surface. Here, we demonstrate this for the case of 30 and 300 keV Au implantation in SiO 2 . For high-energy incoming electrons the elastic peak splits up in different components as the recoil losses depends on the mass of the scattering atom. Heavy impurities also affect the partial intensities and hence changes in the shape of the energy loss spectra are observed. These effects are reproduced by a simple model that uses sample composition, atomic elastic scattering cross sections and target dielectric function as input.

中文翻译：

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通过高能电子散射对离子注入样品进行深度分析

对于注入到低Z靶中的重离子，可以通过研究从表面散射的电子的能谱来确定引入的重杂质的深度和浓度。在这里，我们针对SiO 2中30和300 keV Au注入的情况进行了演示。对于高能入射电子，由于反冲损耗取决于散射原子的质量，弹性峰分成不同的分量。重杂质也影响部分强度，因此观察到能量损失谱的形状变化。通过使用样品成分，原子弹性散射截面和目标介电函数作为输入的简单模型可以再现这些效果。