Abstract The direct growth of graphene was investigated with precipitating graphene on a GaN template at various temperatures. In the method, a carbon source and catalyst were firstly deposited, and the sample was annealed to precipitate graphene. Tungsten capping layer was deposited on the surface to suppress the graphene precipitating to the sample surface. Consequently, the graphene was precipitated at the interface between the catalyst and the GaN template. After the removal of the catalyst, the graphene was successfully obtained on the GaN template. The Raman D/G ratio of the graphene decreased with increasing the annealing temperature. At 700 °C, fine graphene was obtained on the GaN template while maintaining the flatness and smoothness of the GaN surface. XRD and XPS measurements were also performed to investigate the precipitation of the graphene in detail.

中文翻译：

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使用钨覆盖层直接在氮化镓模板上沉淀多层石墨烯

摘要 通过在不同温度下在 GaN 模板上沉淀石墨烯，研究了石墨烯的直接生长。该方法首先沉积碳源和催化剂，然后对样品进行退火以沉淀石墨烯。钨覆盖层沉积在表面上以抑制石墨烯沉淀到样品表面。因此，石墨烯在催化剂和 GaN 模板之间的界面处沉淀。去除催化剂后，在GaN模板上成功获得石墨烯。石墨烯的拉曼 D/G 比随着退火温度的升高而降低。在 700 °C 时，在 GaN 模板上获得了精细的石墨烯，同时保持了 GaN 表面的平整度和光滑度。