Abstract The effects of sodium chloride (NaCl) or sodium hydroxide (NaOH) used to control the p-type conductivity of cuprous oxide Cu2O thin films by reactive thermal annealing (ReTA) at 550 °C in low oxygen content applied to NaX/Cu2O (X = Cl or OH) bilayers were studied. NaX nanolayers were deposited by dipping the Cu2O films in their saturated solutions. It has been reported that annealing Cu2O films covered with NaCl powders increased their hole concentration, but the effects of the X− ions on the oxide film had not been clarified. Here we report that the ReTA process applied to NaX/Cu2O bilayers reduces the electrical resistivity and increases the hole mobility, but the surface characteristics were also modified. During the ReTA process, CuXn (n = 1, 2) chemically reactive compounds are produced etching the film surface. The resistivity of the films was reduced by a factor of ten with respect to the as-grown Cu2O films by the Na incorporation and the hole mobility increased by the surface passivation due to the CuXn surfactant compounds produced during the ReTA process. The ReTA process applied during short periods the Cu2O phase was also stabilized according to the experimental results.

中文翻译：

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NaCl或NaOH作为钠掺杂前驱体在p型纳米晶Cu2O薄膜中的作用研究

摘要 氯化钠 (NaCl) 或氢氧化钠 (NaOH) 用于控制氧化亚铜 Cu2O 薄膜在 550 °C 下通过反应热退火 (ReTA) 在低氧含量下对 NaX/Cu2O 的 p 型电导率的影响 ( X = Cl 或 OH) 双层进行了研究。NaX 纳米层是通过将 Cu2O 薄膜浸入其饱和溶液中来沉积的。据报道，对覆盖有 NaCl 粉末的 Cu2O 膜进行退火会增加其空穴浓度，但 X- 离子对氧化膜的影响尚未阐明。在这里，我们报告了应用于 NaX/Cu2O 双层的 ReTA 工艺降低了电阻率并增加了空穴迁移率，但表面特性也被修改了。在 ReTA 过程中，会产生 CuXn (n = 1, 2) 化学反应性化合物来蚀刻薄膜表面。由于在 ReTA 过程中产生的 CuXn 表面活性剂化合物，Na 掺入使薄膜的电阻率相对于生长的 Cu2O 薄膜降低了 10 倍，而空穴迁移率由于表面钝化而增加。根据实验结果，在短期内应用的 ReTA 工艺也使 Cu2O 相稳定。