Abstract ZnO:Al (AZO) and (Zn,Mg)O:Al (AZMO) films with several Al and Mg contents were deposited by radio frequency co-sputtering process under a room temperature (25 °C). The effects of Al and Mg contents on optical and electrical properties of the AZO and AZMO films were investigated for the suitability of the transparent conductive oxide (TCO) application in optoelectronic devices, requiring low resistivity and high transparency through the enhanced mobility. It is determined that Hall mobility of the AZO is increased, and its carrier concentration is decreased with an almost constant resistivity under the decreased Al content from about 1.7 to 0.3 at.%. The AZO film with the decreased Al content to about 0.6 at.% possesses the enhanced Hall mobility to 32.1 cm2/Vs and the reduced free-carrier absorption, which is suitable for the TCO application with its low resistivity of 5.6 × 10−4 Ω cm. It is also noted that optical bandgap energy (Eg) of the AZO films is increased with the increased Al content due to a Burstein-Moss shift. Moreover, the Mg addition into the AZMO films yields the increase in their Eg and the decrease in the free-carrier absorption under the same Al content. The resistivity of about 2.5 × 10−3 Ω cm by enhancing Hall mobility is consequently obtained in the AZMO films with the Mg content range of 0.06–0.10 with the decreased free-carrier absorption for the TCO application.

中文翻译：

---

通过优化 Al 和 Mg 含量，共溅射在室温下制备 Zn1-xMgxO:Al 的迁移率提高

摘要 ZnO:Al (AZO) 和 (Zn,Mg)O:Al (AZMO) 薄膜具有多种 Al 和 Mg 含量，在室温 (25 °C) 下通过射频共溅射工艺沉积。研究了 Al 和 Mg 含量对 AZO 和 AZMO 薄膜光学和电学性能的影响，以研究透明导电氧化物 (TCO) 在光电器件中的适用性，通过增强的迁移率要求低电阻率和高透明度。确定了 AZO 的霍尔迁移率增加，并且在 Al 含量从大约 1.7 at.% 减少到 0.3 at.% 的情况下，其载流子浓度以几乎恒定的电阻率降低。将 Al 含量降低至约 0.6 at.% 的 AZO 膜具有增强的霍尔迁移率至 32.1 cm2/Vs 和降低的自由载流子吸收，其电阻率为 5.6 × 10−4 Ω cm，适用于 TCO 应用。还注意到，由于 Burstein-Moss 位移，AZO 薄膜的光学带隙能量 (Eg) 随着 Al 含量的增加而增加。此外，在 AZMO 薄膜中添加 Mg 导致它们的 Eg 增加，并且在相同的 Al 含量下自由载流子吸收减少。因此，通过提高霍尔迁移率，在镁含量范围为 0.06-0.10 的 AZMO 薄膜中获得了约 2.5 × 10-3 Ω cm 的电阻率，同时降低了 TCO 应用的自由载流子吸收。在相同的铝含量下，向 AZMO 薄膜中添加 Mg 会导致它们的 Eg 增加和自由载流子吸收的减少。因此，通过提高霍尔迁移率，在镁含量范围为 0.06-0.10 的 AZMO 薄膜中获得了约 2.5 × 10-3 Ω cm 的电阻率，同时降低了 TCO 应用的自由载流子吸收。在相同的铝含量下，向 AZMO 薄膜中添加 Mg 会导致它们的 Eg 增加和自由载流子吸收的减少。因此，通过提高霍尔迁移率，在镁含量范围为 0.06-0.10 的 AZMO 薄膜中获得了约 2.5 × 10-3 Ω cm 的电阻率，同时降低了 TCO 应用的自由载流子吸收。