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Study of morphological and electrical properties of the ZnO/p-Si hetero-junction: Application to sensing efficiency of low concentration of ethanol vapor at room temperature
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2020-04-01 , DOI: 10.1016/j.mssp.2020.104926
S. Tata , L. Chabane , N. Zebbar , M. Trari , M. Kechouane , A. Rahal

Abstract In this work, thin films of ZnO were deposited by DC reactive sputtering of zinc target under (Ar and O2) gas atmosphere, at a deposition temperature of 100 °C. A series of samples were prepared on both corning glass and p-doped crystalline silicon substrates, at different Ar flow rates (FAr) ranging from 0.5 and 2.5 sccm. The films properties were investigated by atomic force microscopy (AFM), Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The results showed thin films with rough surfaces and polycrystalline structure. The electrical study (current-voltage characteristics) of ZnO/p-Si hetero-junctions revealed a rectification behavior. The highest forward current was obtained for FAr = 1.5sccm. The exposure at room temperature of ZnO/p-Si hetero-structures to ethanol vapors showed a high gas sensing response for ZnO/p-Si hetero-junctions with rough surface and high forward current, corresponding to FAr = 1.5 sccm. For a low concentration of ethanol vapor (10 ppm), the dynamic response at room temperature of ZnO/p-Si hetero-junctions revealed a sensitivity ranging from 40 to 80% with response and recovery times of 5 and 3 s respectively. Comparing these characteristics to those already obtained by other teams showed that the elaborated devices in this work are good candidates for fast sensors of low concentrations of ethanol vapors at room temperature.

中文翻译:

ZnO/p-Si异质结的形态和电学特性研究:室温下低浓度乙醇蒸气的传感效率

摘要 在这项工作中,在(Ar 和 O2)气氛下,在 100 °C 的沉积温度下,通过锌靶的直流反应溅射沉积 ZnO 薄膜。在康宁玻璃和 p 掺杂的晶体硅基板上制备了一系列样品,不同的 Ar 流速 (FAr) 范围为 0.5 和 2.5 sccm。通过原子力显微镜 (AFM)、扫描电子显微镜 (SEM) 和 X 射线衍射 (XRD) 研究薄膜性能。结果显示具有粗糙表面和多晶结构的薄膜。ZnO/p-Si 异质结的电气研究(电流-电压特性)揭示了整流行为。FAr = 1.5sccm 时获得最高正向电流。ZnO/p-Si 异质结构在室温下暴露于乙醇蒸汽中,对具有粗糙表面和高正向电流的 ZnO/p-Si 异质结显示出高气敏响应,对应于 FAr = 1.5 sccm。对于低浓度乙醇蒸汽 (10 ppm),ZnO/p-Si 异质结在室温下的动态响应显示灵敏度范围为 40% 至 80%,响应时间和恢复时间分别为 5 秒和 3 秒。将这些特征与其他团队已经获得的特征进行比较表明,这项工作中精心设计的设备是室温下低浓度乙醇蒸汽快速传感器的良好候选者。ZnO/p-Si 异质结在室温下的动态响应显示灵敏度为 40% 到 80%,响应时间和恢复时间分别为 5 秒和 3 秒。将这些特征与其他团队已经获得的特征进行比较表明,这项工作中精心设计的设备是室温下低浓度乙醇蒸汽快速传感器的良好候选者。ZnO/p-Si 异质结在室温下的动态响应显示灵敏度为 40% 到 80%,响应时间和恢复时间分别为 5 秒和 3 秒。将这些特征与其他团队已经获得的特征进行比较表明,这项工作中精心设计的设备是室温下低浓度乙醇蒸汽快速传感器的良好候选者。
更新日期:2020-04-01
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