Abstract The current study reports a single-step synthesis of thermoelectric material p-type chromium di-silicide (CrSi2), using reaction sintering of their elemental powders employing spark plasma assisted sintering at optimized processing parameters. This process of single-step synthesis takes only a few minutes in contrast to the conventional processes reported earlier, which take several hours and involve multi-step processing, including arc-melting and/or mechanical alloying followed by spark plasma sintering/hot pressing. Despite employing a facile single-step synthesis process, an enhanced state-of-the-art thermoelectric figure of merit (ZT) ~ 0.19 at 673 K was achieved in pristine single phase CrSi2, which is the highest reported thus far in pristine CrSi2 at this temperature. It was observed that in order to compensate for the loss of Si during high temperature processing, 2.5 at.% of excess Si was found to be optimum in order to obtain a single-phase CrSi2. The synthesized CrSi2 samples were characterized using X-ray diffraction, Field emission scanning electron microscopy and Energy dispersive X-ray spectroscopy, based on which their enhancement of thermoelectric properties has been discussed.

中文翻译：

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使用简便的单步放电等离子体辅助反应烧结合成的原始 CrSi2 的热电性能增强

摘要 目前的研究报告了热电材料 p 型二硅化铬 (CrSi2) 的单步合成，使用其元素粉末的反应烧结，采用放电等离子体辅助烧结，在优化的工艺参数下进行。与之前报道的传统工艺相比，这种单步合成过程只需几分钟，传统工艺需要几个小时，涉及多步处理，包括电弧熔化和/或机械合金化，然后是放电等离子体烧结/热压。尽管采用了简单的单步合成工艺，但在原始单相 CrSi2 中实现了在 673 K 时提高的最先进的热电品质因数 (ZT) ~ 0.19，这是迄今为止在原始 CrSi2 中报道的最高值这个温度。据观察，为了补偿高温加工过程中 Si 的损失，发现 2.5 at.% 的过量 Si 是获得单相 CrSi2 的最佳选择。使用 X 射线衍射、场发射扫描电子显微镜和能量色散 X 射线光谱对合成的 CrSi2 样品进行表征，并在此基础上讨论了它们对热电性能的增强。