Abstract In the past ten years, hybrid perovskite materials have attracted extensive research attention due to their outstanding physical properties. Further improvement in the photoresponsive performance is limited by the recombination of charge carriers in the perovskite films. Here, by controlling the stoichiometry of precursors, p-type perovskite films are obtained. The transformation of p-type to n-type in the surface layer of CH3NH3PbI3 film is dramatically achieved by Ar+ bombardment. An n/p-type perovskite homojunction is successfully in situ induced, whose built-in electric field could promote the oriented transport of photo-induced carriers. This perovskite homojunction exhibits an increased Ilight/Idark ratio by almost one order of magnitude at room temperature under 532 nm light irradiation. The Ar+ bombardment method has generic appeal, and its key attributes-in situ induction of p–n homojunction-improve the unicity of preparation for growing perovskite homojunction and make this method potentially suitable for future multifunctional perovskite-based photoelectric devices.

中文翻译：

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通过 Ar+ 轰击原位诱导 p-n 同质结的钙钛矿薄膜中增强的自供电光响应

摘要 近十年来，杂化钙钛矿材料以其优异的物理性能引起了广泛的研究关注。钙钛矿薄膜中电荷载流子的复合限制了光响应性能的进一步提高。在这里，通过控制前体的化学计量，获得了 p 型钙钛矿薄膜。在 CH3NH3PbI3 薄膜的表层中 p 型到 n 型的转变是通过 Ar+轰击实现的。成功地原位诱导了 n/p 型钙钛矿同质结，其内置电场可以促进光生载流子的定向传输。这种钙钛矿同质结在室温下在 532 nm 光照射下表现出几乎一个数量级的 Ilight/Idark 比率增加。