Abstract Silicon (Si) nanowires with twining or stacking faults are challenging their applications in microelectronic devices. It is of great value to explore the assembling principle of the crystal structure of Si nanowires. In this work, Si nanowires are grown by thermal annealing of nickel (Ni) coated Si wafers underneath an amorphous carbon layer. A systematically investigation is performed on the crystal structure of Si nanowires and the connected Ni catalyst particles using field emission scanning electron microscopy, high resolution transmission electron microscopy and selected area electron diffraction pattern. The results reveal that the defect-free Si nanowire has a highly crystalline Si core surrounded by the amorphous Si-oxide shell. Twinning and stacking faults are discovered locating near the Ni catalyst particles. The origin for the structural defects is explained by a structure-sensitive principle.

中文翻译：

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硅纳米线生长中的结构敏感原理

摘要 具有缠绕或堆垛层错的硅 (Si) 纳米线对其在微电子器件中的应用提出了挑战。探索Si纳米线晶体结构的组装原理具有重要价值。在这项工作中，通过对无定形碳层下方的镍 (Ni) 涂层硅晶片进行热退火来生长硅纳米线。使用场发射扫描电子显微镜、高分辨率透射电子显微镜和选区电子衍射图对 Si 纳米线和连接的 Ni 催化剂颗粒的晶体结构进行了系统研究。结果表明，无缺陷的硅纳米线具有被非晶硅氧化物壳包围的高度结晶的硅核。在 Ni 催化剂颗粒附近发现了孪晶和堆垛层错。