Electronic transition in BGaAs/GaAs single quantum well (SQW) have been performed combining the dimensional Schrödinger equation, band anticroissing BAC and 10-band k.p models. The modelling results have been validated experimentally by photoluminescence (PL), high resolution-X-ray diffraction (HRXRD) and photoreflectance (PR). The calculated results appeared to be consistent with experiments. Surface photovoltage SPV spectroscopy gives a new way to study the bandgap of the boron based-SQW for the first time. New e₁-lh₁ transition appeared which is specific to the SQW. The suggested structure looks to be a promising candidate for solar cells and photonic applications as well as a reference for the growth optimization and understanding of the electronic properties of related B(In)GaAs/GaAs quaternary alloys.

Electronic transition in BGaAs/GaAs single quantum well (SQW) have been performed combining the dimensional Schrödinger equation, band anticroissing BAC and 10-band k.p models. The modelling results have been validated experimentally by photoluminescence (PL), high resolution-X-ray diffraction (HRXRD) and photoreflectance (PR). The calculated results appeared to be consistent with experiments. Surface photovoltage SPV spectroscopy gives a new way to study the bandgap of the boron based-SQW for the first time. New e₁-lh₁出现了特定于SQW的过渡。所提出的结构看起来是太阳能电池和光子应用的有前途的候选者，并且是生长优化和相关B（In）GaAs / GaAs四元合金电子性能理解的参考。