Abstract Bismuth vanadate (BiVO4) is considered one of the most successful candidates to be used as photoanode for solar-to-hydrogen conversion. However, its relatively high recombination rates and considered low long-term stability limits its applicability. Doping BiVO4 with tungsten and developing heterojunctions with inorganic perovskites has emerged as strategies to overcome these issues. However, the development of these materials requires plenty of time and energy. Here, we reported the development of a new synthetic method to prepare heterojunctions of tungsten-doped bismuth vanadate (using 1, 3 and 5 % in mass of W) and tungsten oxide. The heterojunctions were prepared in a one-pot microwave-assisted method that takes only 24 min. Photocatalytic efficiency was determined through quantification of the amount of hydroxyl radical, generated by the catalysts when they are irradiated with simulated sunlight, and through photoelectrochemical experiments. The heterojunctions showed enhanced photocatalytic activity, which was ascribed to the adequate alignment of the band edges potentials of the semiconductors. Also, the tungsten doping decreases the recombination rates. Both effects increase the photogenerated charges lifetime.

中文翻译：

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轻松一锅微波辅助合成具有增强光催化活性的掺钨 BiVO4/WO3 异质结

摘要 钒酸铋 (BiVO4) 被认为是最成功的候选材料之一，可用作太阳能到氢气转换的光电阳极。然而，其相对较高的重组率和较低的长期稳定性限制了其适用性。用钨掺杂 BiVO4 和用无机钙钛矿开发异质结已成为克服这些问题的策略。然而，这些材料的开发需要大量的时间和精力。在这里，我们报道了一种新的合成方法的发展，以制备掺杂钨的钒酸铋（使用质量的 1、3 和 5% 的 W）和氧化钨的异质结。异质结采用一锅式微波辅助方法制备，仅需 24 分钟。光催化效率是通过量化羟基自由基的量来确定的，由催化剂在模拟日光照射下通过光电化学实验产生。异质结表现出增强的光催化活性，这归因于半导体带边电位的充分对齐。此外，钨掺杂降低了复合率。这两种效应都增加了光生电荷的寿命。