Abstract Sb2Se3, an emerging promising binary compound semiconductor, was prepared at different substrate temperatures by pulsed laser deposition for thin film solar cells for the first time. In this work, CdS and Sb2Se3 films were subsequently deposited by pulsed laser deposition to simplify the process. Film properties and device performance, closely related to the substrate temperature, were characterized by thermal gravimetric analysis, X-ray diffraction, UV–Vis–NIR spectrophotometer, scanning electron microscope, light and dark current density-voltage, external quantum efficiency and capacitance-voltage, respectively. Results indicate that Sb2Se3 solar cells film deposited at 500 °C is better, with a better efficiency of 3.58%. Furthermore, SnO2 high resistive layer was introduced into Sb2Se3 solar cell to improve the junction quality, leading to a champion device efficiency of 4.41%.

中文翻译：

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衬底温度和SnO2高阻层对脉冲激光沉积Sb2Se3薄膜太阳能电池的影响

摘要 Sb2Se3 是一种新兴的有前途的二元化合物半导体，首次通过脉冲激光沉积在不同衬底温度下制备薄膜太阳能电池。在这项工作中，CdS 和 Sb2Se3 薄膜随后通过脉冲激光沉积来沉积以简化工艺。通过热重分析、X 射线衍射、UV-Vis-NIR 分光光度计、扫描电子显微镜、光和暗电流密度-电压、外量子效率和电容来表征与基板温度密切相关的薄膜特性和器件性能。电压，分别。结果表明，Sb2Se3 太阳能电池薄膜在 500 °C 沉积效果更好，效率更高，为 3.58%。此外，在 Sb2Se3 太阳能电池中引入了 SnO2 高阻层以提高结质量，