Abstract Two non-identical Mg/ZnSnP2 and ZnSnP2/Sn Schottky diodes connected in coplanar back-to-back configuration are fabricated on p-type silicon (100) substrate for photodetection in the UV-VIS-NIR spectral region. A detailed study of the power and bias dependent responsivity, detectivity, and response and recovery speed of the devices is reported. The responsivity and detectivity were found to be 0.2 A W-1 and 4.62 × 1012 Jones for the Mg/ZnSnP2 and 0.03 A W-1 and 1.62 × 1011 Jones for the Sn/ZnSnP2 junctions, respectively when they were operated without bias. However, under a reverse bias of 2.5 V, these values changed to 4.7 A W-1 and 1.19 × 1012 Jones in the case of Mg/ZnSnP2 and 12.7 A W-1 and 4.78 × 1011 Jones for Sn/ZnSnP2 junctions, respectively. The photocurrents associated with both the junctions were increased superlinearly with illumination power which is correlated to the conversion of the existing traps within the forbidden energy gap to the recombination centers. The response and recovery speed of the photodetectors were also studied under variable bias and illumination power. Under an incident power of 0.34 mW, the rise and decay times for the Mg/ZnSnP2 and Sn/ZnSnP2 junctions were 200 μs, 2300 μs and 390 μs, 240 μs, respectively at 2.5 V. The Mg/ZnSnP2 showed an anomalous bias dependent secondary decay channel which disappeared at self-powered configuration. The frequency-dependent capacitance in the dark and illumination power-dependent capacitance of the structure were also performed to understand the presence of defect states and the capture of photogenerated carriers by the traps and recombination centers.

中文翻译：

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高性能宽带 Mg/ZnSnP2/Sn 背靠背肖特基结光电探测器的探测偏置和功率依赖性

摘要 在 p 型硅 (100) 衬底上制造了两个不同的 Mg/ZnSnP2 和 ZnSnP2/Sn 肖特基二极管，它们以共面背对背配置连接，用于 UV-VIS-NIR 光谱区域的光电检测。报告了对设备的功率和偏置相关响应度、探测度以及响应和恢复速度的详细研究。Mg/ZnSnP2 的响应度和探测率分别为 0.2 A W-1 和 4.62 × 1012 Jones，Sn/ZnSnP2 结的响应度和探测率分别为 0.03 A W-1 和 1.62 × 1011 Jones，当它们在无偏压下工作时。然而，在 2.5 V 的反向偏压下，Mg/ZnSnP2 的这些值分别变为 4.7 A W-1 和 1.19 × 1012 Jones，Sn/ZnSnP2 结的这些值分别变为 12.7 A W-1 和 4.78 × 1011 Jones。与两个结相关的光电流随着照明功率超线性增加，这与禁止能隙内现有陷阱到复合中心的转换相关。还在可变偏置和照明功率下研究了光电探测器的响应和恢复速度。在 0.34 mW 的入射功率下，Mg/ZnSnP2 和 Sn/ZnSnP2 结的上升和衰减时间分别为 200 μs、2300 μs 和 390 μs、240 μs，电压为 2.5 V。 Mg/ZnSnP2 显示出异常偏置相关在自供电配置下消失的二次衰减通道。