Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices.,Advanced Science

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Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices.
Advanced Science ( IF 14.3 ) Pub Date : 2020-01-19 , DOI: 10.1002/advs.201902699
Wanlong Guo _{1,

2,

3} , Zhuo Dong _{4,

5} , Yijun Xu ₄ , Changlong Liu ₆ , Dacheng Wei ₇ , Libo Zhang _{1,

2,

3} , Xinyao Shi ₄ , Cheng Guo _{1,

2} , Huang Xu _{1,

2} , Gang Chen _{1,

2} , Lin Wang _{1,

2} , Kai Zhang ₄ , Xiaoshuang Chen _{1,

2,

3} , Wei Lu _{1,

2,

3}

Affiliation

Terahertz (THz) photon detection is of particular appealing for myriad applications, but it still lags behind efficient manipulation with electronics and photonics due to the lack of a suitable principle satisfying both high sensitivity and fast response at room temperature. Here, a new strategy is proposed to overcome these limitations by exploring the photothermoelectric (PTE) effect in an ultrashort (down to 30 nm) channel with black phosphorus as a photoactive material. The preferential flow of hot carriers is enabled by the asymmetric Cr/Au and Ti/Au metallization with the titled-angle evaporation technique. Most intriguingly, orders of magnitude field-enhancement beyond the skin-depth limit and photon absorption across a broadband frequency can be achieved. The PTE detector has excellent sensitivity of 297 V W-1, noise equivalent power less than 58 pW/Hz0.5, and response time below 0.8 ms, which is superior to other thermal-based detectors at room temperature. A rigorous comparison with existing THz detectors, together with verification by further optical-pumping and imaging experiments, substantiates the importance of the localized field effect in the skin-depth limit. The results allow solid understanding on the role of PTE effect played in the THz photoresponse, opening up new opportunities for developing highly sensitive THz detectors for addressing targeted applications.

中文翻译：

超短通道黑磷器件中光电热效应驱动的灵敏的太赫兹检测和成像。

太赫兹（THz）光子检测在无数应用中特别有吸引力，但由于缺乏在室温下满足高灵敏度和快速响应的合适原理，它仍然落后于电子和光子学的有效操纵。在这里，提出了一种新的策略来克服这些限制，方法是在黑磷作为光敏材料的超短（低至30 nm）通道中探索光热电（PTE）效应。热载流子的优先流动是通过采用标题角蒸发技术的不对称Cr / Au和Ti / Au金属化实现的。最为有趣的是，可以达到超过趋肤深度极限的数量级场增强和宽带频率上的光子吸收。PTE检测器具有297 V W-1的出色灵敏度，噪声等效功率低于58 pW / Hz0.5，响应时间低于0.8 ms，在室温下优于其他基于热的探测器。与现有THz探测器的严格比较，再加上进一步的光泵和成像实验的验证，证实了局部场效应在趋肤深度极限中的重要性。这些结果使人们对PTE效应在THz光响应中所起的作用有了深入的了解，为开发高灵敏的THz检测器提供了新的机遇，以应对目标应用。证实了局部场效应在趋肤深度极限中的重要性。这些结果使人们对PTE效应在THz光响应中所起的作用有了扎实的了解，为开发高灵敏的THz检测器提供了新的机遇，以应对目标应用。证实了局部场效应在趋肤深度极限中的重要性。这些结果使人们对PTE效应在THz光响应中所起的作用有了扎实的了解，为开发高灵敏的THz检测器提供了新的机遇，以应对目标应用。

更新日期：2020-01-21

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