Organic light‐emitting diodes (OLEDs) can emit light over much larger areas than their inorganic counterparts, offer mechanical flexibility, and can be readily integrated on various substrates and backplanes. However, the amount of light they emit per unit area is typically lower and the required operating voltage is higher, which can be a limitation for emerging applications of OLEDs, e.g., in outdoor and high‐dynamic‐range displays, biomedical devices, or visible‐light communication. Here, high‐luminance, blue‐emitting (λ_peak = 464 nm), fluorescent p–i–n OLEDs are developed by combining three strategies: First, the thickness of the intrinsic layers in the device is decreased to reduce internal voltage loss. Second, different electron‐blocking layer materials are tested to recover efficiency losses resulting from this thickness reduction. Third, the geometry of the anode contact is optimized, which leads to a substantial reduction in the in‐plane resistive voltage losses. The OLEDs retain a maximum external quantum efficiency of 4.4% as expected for an optimized fluorescent device and reach a luminance of 132 000 cd m⁻² and an optical power density of 2.4 mW mm⁻² at 5 V, a nearly eightfold improvement compared to the original reference device.

中文翻译：

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基于p-i–n结的超高亮度蓝色荧光有机发光二极管的开发

有机发光二极管（OLED）的发光面积比无机发光二极管大得多，具有机械柔韧性，并且可以轻松集成在各种基板和背板上。但是，它们每单位面积发出的光量通常较低，而所需的工作电压较高，这可能会限制OLED的新兴应用，例如在室外和高动态范围显示器，生物医学设备或可见光中‐光通信。在这里，高亮度，发蓝光（λ_峰值= 464 nm），通过组合三种策略开发了荧光p–i–n OLED：首先，减小器件中本征层的厚度以减少内部电压损耗。其次，对不同的电子阻挡层材料进行了测试，以恢复由于厚度减小而导致的效率损失。第三，优化了阳极触点的几何形状，从而大大降低了面内电阻电压损耗。OLED保留了优化荧光设备所期望的4.4％的最大外部量子效率，并在5 V电压下达到132 000 cd m ^-2的亮度和2.4 mW mm ^-2的光功率密度，与之相比，提高了近八倍原始参考设备。