Abstract

Bi thin films were grown on (111)-oriented 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN–PT) single-crystal substrates by pulsed laser deposition. Resistance of Bi/PMN–PT could be modulated by asymmetrical bipolar electric field in a reversible and nonvolatile manner at 300 K. By tuning asymmetrical bipolar electric field, different nonvolatile strain states could be generated in PMN–PT and transferred to Bi thin film, which leads to different nonvolatile resistance states. Furthermore, different resistance states of the Bi films could be achieved under different magnetic field at 300 K. The ferroelastic strain- and magnetic-field-modulated resistive properties in Bi/PMN–PT suggest a promising approach for multistate resistive memories.

中文翻译：

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Bi / PMN–PT（111）异质结构中电场和磁场的多态电阻转换

摘要

通过脉冲激光沉积在（111）取向的0.7Pb（Mg _1/3 Nb _2/3）O ₃ –0.3PbTiO ₃（PMN-PT）单晶基板上生长Bi薄膜。Bi / PMN–PT的电阻可以通过非对称双极电场在300 K时以可逆且非易失性的方式进行调节。通过调节非对称双极电场，可以在PMN–PT中产生不同的非易失性应变状态，并将其转移到Bi薄膜中，导致不同的非易失性电阻状态。此外，可以在300 K的不同磁场下实现Bi膜的不同电阻状态。Bi/ PMN–PT中的铁弹性应变和磁场调制电阻特性为多态电阻存储器提供了一种有希望的方法。