Abstract

Mono-like cast silicon (ML C-Si) passivated emitter and rear cell (PERC) solar cells with high performance and low price are becoming popular in the modern PV market. In this work, mono-like cast silicon PERC solar cells with B and Ga co-doping were treated by single current injection annealing (CIA) process and double CIA process. According to Light-induced degradation (LID) effect analysis, it was found that both single CIA process and double CIA process would enhance the electrical properties of the solar cells. After a light soaking treatment for 60 kWh, the efficiency of the solar cells treated by single CIA process decreased by 1.96% comparing with that before the CIA process. In contrast, the efficiency of the solar cells treated by double CIA process decreased by only 1.13%. All the results, including changes in other electrical properties of solar cells, showed that double CIA process would effectively enhance the anti-LID effect of ML C-Si PERC solar cells.

中文翻译：

---

双电流注入退火对单晶铸硅PERC太阳能电池抗LID效应的影响

摘要

具有高性能和低价格的类单晶硅（ML C-Si）钝化的发射极和后电池（PERC）太阳能电池在现代PV市场中正变得越来越流行。在这项工作中，通过单电流注入退火（CIA）工艺和双CIA工艺对具有B和Ga共掺杂的类单晶硅PERC太阳能电池进行了处理。根据光致降解（LID）效应分析，发现单CIA工艺和双CIA工艺都会增强太阳能电池的电性能。经过60 kWh的轻度浸泡处理后，与CIA处理之前相比，单个CIA处理处理的太阳能电池的效率下降了1.96％。相比之下，通过双重CIA处理的太阳能电池的效率仅降低了1.13％。所有结果